产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMFWD020N06CT1G

NVMFWD020N06CT1G

MOSFET 2N-CH 60V 8A 8DFN

onsemi

4,413 0.95
NVMFWD020N06CT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 8A (Ta), 27A (Tc) 20.3mOhm @ 4A, 10V 4V @ 20µA 5.8nC @ 10V 355pF @ 30V 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD6H840NLT1G

NTMFD6H840NLT1G

MOSFET 2N-CH 80V 14A 8DFN

onsemi

1,500 1.08
NTMFD6H840NLT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 14A (Ta), 74A (Tc) 6.9mOhm @ 20A, 10V 2V @ 96µA 32nC @ 10V 2022pF @ 40V 3.1W (Ta), 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD1D4N02P1E

NTMFD1D4N02P1E

MOSFET 2N-CH 25V 13A 8PQFN

onsemi

2,870 0.95
NTMFD1D4N02P1E

数据手册

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 25V 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V 2V @ 250µA, 2V @ 800µA 7.2nC @ 4.5V, 21.5nC @ 4.5V 1180pF @ 13V, 3603pF @ 13V 960mW (Ta), 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
NVMFWD016N06CT1G

NVMFWD016N06CT1G

MOSFET 2N-CH 60V 9A 8DFN

onsemi

1,500 1.02

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 9A (Ta), 32A (Tc) 16.3mOhm @ 5A, 10V 4V @ 25µA 6.9nC @ 10V 489pF @ 30V 3.1W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFC013NP10M5L

NTMFC013NP10M5L

MOSFET N/P-CH 100V 9A 8WDFN

onsemi

2,850 1.10
NTMFC013NP10M5L

数据手册

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V 3V @ 158µA, 4V @ 158µA 23nC @ 4.5V, 30nC @ 10V 1345pF @ 50V, 2443pF @ 50V 2.7W (Ta), 102W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (5x6)
NVMFD5C668NLWFT1G

NVMFD5C668NLWFT1G

MOSFET 60V S08FL DUAL

onsemi

1,500 1.27
NVMFD5C668NLWFT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active - - - - - - - - - - - Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMFD5C462NWFT1G

NVMFD5C462NWFT1G

MOSFET 40V S08FL DUAL

onsemi

1,475 1.26
NVMFD5C462NWFT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active - - - - - - - - - - - Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTTFD018N08LC

NTTFD018N08LC

MOSFET 2N-CH 80V 6A 12WQFN

onsemi

2,945 1.34
NTTFD018N08LC

数据手册

- 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 6A (Ta), 26A (Tc) 18mOhm @ 7.8A, 10V 2.5V @ 44µA 12.4nC @ 10V 856pF @ 40V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
NTTFD021N08C

NTTFD021N08C

MOSFET 2N-CH 80V 6A 12WQFN

onsemi

2,611 1.35
NTTFD021N08C

数据手册

- 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 6A (Ta), 24A (Tc) 21mOhm @ 7.8A, 10V 4V @ 44µA 8.4nC @ 10V 572pF @ 40V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
NTTFD022N10C

NTTFD022N10C

MOSFET 2N-CH 100V 6A 12WQFN

onsemi

2,980 1.38
NTTFD022N10C

数据手册

- 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 6A (Ta), 24A (Tc) 25mOhm @ 7.8A, 10V 4V @ 44µA 9nC @ 10V 585pF @ 50V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
NVMFD5C446NWFT1G

NVMFD5C446NWFT1G

MOSFET 2N-CH 40V 24A 8DFN

onsemi

2,965 1.68
NVMFD5C446NWFT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 24A (Ta), 127A (Tc) 2.9mOhm @ 30A, 10V 3.5V @ 250µA 38nC @ 10V 2450pF @ 25V 3.2W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXV08A170DB2

NXV08A170DB2

MOSFET 2N-CH 80V 200A APM12-CBA

onsemi

238 -
NXV08A170DB2

数据手册

- 12-PowerDIP Module (1.118", 28.40mm) Tray Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 80V 200A (Tj) 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V 4V @ 250µA 195nC @ 10V 14000pF @ 40V - 175°C (TJ) Automotive AEC-Q100 Through Hole APM12-CBA
NVXK2TR40WXT

NVXK2TR40WXT

MOSFET 4N-CH 1200V 27A APM32

onsemi

4,918 -
NVXK2TR40WXT

数据手册

- 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 27A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NXH030F120M3F1PTG

NXH030F120M3F1PTG

MOSFET 4N-CH 1200V 38A 22PIM

onsemi

3,735 -
NXH030F120M3F1PTG

数据手册

- Module Tray Active SiCFET (Silicon Carbide) 4 N-Channel (Full Bridge) Depletion Mode 1200V (1.2kV) 38A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2246pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH010P120M3F1PG

NXH010P120M3F1PG

MOSFET 2N-CH 1200V 105A

onsemi

1,359 -
NXH010P120M3F1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120M3F1PTG

NXH010P120M3F1PTG

MOSFET 2N-CH 1200V 105A

onsemi

2,312 -
NXH010P120M3F1PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH030P120M3F1PTG

NXH030P120M3F1PTG

MOSFET 2N-CH 1200V 42A

onsemi

2,517 -
NXH030P120M3F1PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 42A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2271pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH040P120MNF1PG

NXH040P120MNF1PG

MOSFET 2N-CH 1200V 30A

onsemi

3,510 64.45
NXH040P120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH008P120M3F1PTG

NXH008P120M3F1PTG

MOSFET 2N-CH 1200V 145A

onsemi

4,653 -
NXH008P120M3F1PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P120MNF1PTNG

NXH010P120MNF1PTNG

MOSFET 2N-CH 1200V 114A

onsemi

1,465 100.26
NXH010P120MNF1PTNG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -