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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FDPC8013S

FDPC8013S

MOSFET 2N-CH 30V 13A PWRCLIP-33

onsemi

1,262 1.98
FDPC8013S

数据手册

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 13A, 26A 6.4mOhm @ 13A, 10V 3V @ 250µA 13nC @ 10V 827pF @ 15V 800mW, 900mW -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
NVMFD6H840NLT1G

NVMFD6H840NLT1G

MOSFET 2N-CH 80V 14A 8DFN

onsemi

1,502 2.30
NVMFD6H840NLT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 14A (Ta), 74A (Tc) 6.9mOhm @ 20A, 10V 2V @ 96µA 32nC @ 10V 2002pF @ 40V - -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDMQ8403

FDMQ8403

MOSFET 4N-CH 100V 3.1A 12MLP

onsemi

14,889 2.87
FDMQ8403

数据手册

GreenBridge™ PowerTrench® 12-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 3.1A 110mOhm @ 3A, 10V 4V @ 250µA 5nC @ 10V 215pF @ 15V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 12-MLP (5x4.5)
NVMFD5C446NLWFT1G

NVMFD5C446NLWFT1G

MOSFET 2N-CH 40V 25A 8DFN

onsemi

785 4.15
NVMFD5C446NLWFT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 25A (Ta), 145A (Tc) 2.65mOhm @ 20A, 10V 2.2V @ 90µA 25nC @ 4.5V 3170pF @ 25V 3.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXH011T120M3F2PTHG

NXH011T120M3F2PTHG

MOSFET 4N-CH 1200V 91A 29PIM

onsemi

3,384 -
NXH011T120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Solar Inverter) - 1200V (1.2kV) 91A (Tc) 16mOhm @ 70A, 18V 4.4V @ 40mA 306nC @ 20V 6331pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
NXH004P120M3F2PTHG

NXH004P120M3F2PTHG

MOSFET 2N-CH 1200V 284A 36PIM

onsemi

3,226 -
NXH004P120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 284A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 785W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NVJD5121NT1G-M06

NVJD5121NT1G-M06

MOSFET 2N-CH 60V 0.295A SC88

onsemi

40,120 0.33
NVJD5121NT1G-M06

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 295mA (Ta) 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
NTJD4105CT2G

NTJD4105CT2G

MOSFET N/P-CH 20V/8V 0.63A SC88

onsemi

3,859 0.34
NTJD4105CT2G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 8V 630mA, 775mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
NVJD4401NT1G

NVJD4401NT1G

MOSFET 2N-CH 20V 0.63A SC88

onsemi

49,287 0.52
NVJD4401NT1G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 630mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
EFC2J013NUZTDG

EFC2J013NUZTDG

MOSFET 2N-CH 6WLCSP

onsemi

4,319 0.49
EFC2J013NUZTDG

数据手册

- 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - - 1.3V @ 1mA 37nC @ 4.5V - 1.8W (Ta) 150°C (TJ) - - Surface Mount 6-WLCSP (2x1.49)