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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NXH003P120M3F2PTHG

NXH003P120M3F2PTHG

MOSFET 2N-CH 1200V 350A 36PIM

onsemi

3,530 -
NXH003P120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 350A (Tc) 5mOhm @ 200A, 18V 4.4V @ 160mA 1195nC @ 20V 20889pF @ 800V 979W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NXH003P120M3F2PTNG

NXH003P120M3F2PTNG

MOSFET 2N-CH 1200V 435A 36PIM

onsemi

3,655 -
NXH003P120M3F2PTNG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 435A (Tj) 5mOhm @ 200A, 18V 4.4V @ 160mA 1200nC @ 20V 20889pF @ 800V 1.48kW (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NTJD5121NT1G

NTJD5121NT1G

MOSFET 2N-CH 60V 0.295A SC88

onsemi

67,522 0.30
NTJD5121NT1G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
NTJD5121NT2G

NTJD5121NT2G

MOSFET 2N-CH 60V 0.295A SC88

onsemi

11,715 0.32
NTJD5121NT2G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
NVJD5121NT1G

NVJD5121NT1G

MOSFET 2N-CH 60V 0.295A SC88

onsemi

26,688 0.33
NVJD5121NT1G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 295mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.9nC @ 4.5V 26pF @ 20V 250mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
NTZD5110NT1G

NTZD5110NT1G

MOSFET 2N-CH 60V 0.294A SOT563

onsemi

18,233 0.33
NTZD5110NT1G

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 294mA 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.7nC @ 4.5V 24.5pF @ 20V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
EFC6612R-TF

EFC6612R-TF

MOSFET 2N-CH 20V 23A 6CSP

onsemi

9,817 0.32
EFC6612R-TF

数据手册

- 6-SMD, No Lead Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - - 27nC @ 4.5V - 2.5W 150°C (TJ) - - Surface Mount 6-CSP (1.77x3.54)
NTZD3155CT2G

NTZD3155CT2G

MOSFET N/P-CH 20V 0.54A SOT563

onsemi

50,413 0.36
NTZD3155CT2G

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 540mA, 430mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
NTND31015NZTAG

NTND31015NZTAG

MOSFET 2N-CH 20V 0.2A 6XLLGA

onsemi

23,514 0.34
NTND31015NZTAG

数据手册

- 6-XFLGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 200mA 1.5Ohm @ 100mA, 4.5V 1V @ 250µA - 12.3pF @ 15V 125mW -55°C ~ 150°C (TJ) - - Surface Mount 6-XLLGA (0.9x0.65)
NVTJD4001NT1G

NVTJD4001NT1G

MOSFET 2N-CH 30V 0.25A SC88

onsemi

257,584 0.42
NVTJD4001NT1G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 1.5Ohm @ 10mA, 4V 1.5V @ 100µA 1.3nC @ 5V 33pF @ 5V 272mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363