产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NXV10V160ST1

NXV10V160ST1

MOSFET 6N-CH 100V APM21-CGA

onsemi

5,399 -
NXV10V160ST1

数据手册

- 21-PowerDIP Module (1.370", 34.80mm) Tube Active MOSFET (Metal Oxide) 6 N-Channel - 100V - - 4.5V @ 250µA 101nC @ 10V 6970pF @ 50V - 175°C (TJ) - - Through Hole APM21-CGA
NXV08H250DT1

NXV08H250DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

6,371 -
NXV08H250DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H250DPT2

NXV08H250DPT2

MOSFET 4N-CH 80V APM17-MFA

onsemi

9,988 -
NXV08H250DPT2

数据手册

- 17-PowerDIP Module (2.020", 51.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - -40°C ~ 125°C Automotive AEC-Q101 Through Hole APM17-MFA
NXV08H300DT1

NXV08H300DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

2,437 -
NXV08H300DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H400XT2

NXV08H400XT2

MOSFET 4N-CH 80V APM17-MDA

onsemi

3,944 -
NXV08H400XT2

数据手册

- 17-PowerDIP Module (1.778", 45.15mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.765mOhm @ 160A, 12V, 0.710mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDA
NXV08B800DT1

NXV08B800DT1

MOSFET 80V APM17-MDC

onsemi

8,560 -
NXV08B800DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.46mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H350XT1

NXV08H350XT1

MOSFET 80V APM17-MDC

onsemi

3,804 -
NXV08H350XT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.762mOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
MMDF2P02HDR2

MMDF2P02HDR2

MOSFET 2P-CH 20V 3.3A 8SOIC

onsemi

4,793 -
MMDF2P02HDR2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.3A 160mOhm @ 2A, 10V 2V @ 250µA 20nC @ 10V 588pF @ 16V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
MMDF3N04HDR2

MMDF3N04HDR2

MOSFET 2N-CH 40V 3.4A 8SOIC

onsemi

4,954 -
MMDF3N04HDR2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 3.4A 80mOhm @ 3.4A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 32V 1.39W - - - Surface Mount 8-SOIC
MMDF1N05ER2

MMDF1N05ER2

MOSFET 2N-CH 50V 2A 8SOIC

onsemi

8,393 -
MMDF1N05ER2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 2A 300mOhm @ 1.5A, 10V 3V @ 250µA 12.5nC @ 10V 330pF @ 25V 2W - - - Surface Mount 8-SOIC