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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ADP360120W3

ADP360120W3

MOSFET 6N-CH 1200V 379A ACEPACK

STMicroelectronics

3,561 -
ADP360120W3

数据手册

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 379A (Tj) 3.45mOhm @ 360A, 18V 4.4V @ 40mA 944nC @ 18V 28070pF @ 800V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
SH63N65DM6AG

SH63N65DM6AG

MOSFET 2N-CH 650V 53A 9ACEPACK

STMicroelectronics

2,377 -
SH63N65DM6AG

数据手册

ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 53A (Tc) 64mOhm @ 23A, 10V 4.75V @ 250µA 80nC @ 10V 3344pF @ 100V 424W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
ADP46075W3

ADP46075W3

MOSFET 6N-CH 750V 485A ACEPACK

STMicroelectronics

2,339 -
ADP46075W3

数据手册

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
ADP280120W3

ADP280120W3

MOSFET 6N-CH 1200V 275A ACEPACK

STMicroelectronics

2,660 -
ADP280120W3

数据手册

ECOPACK® Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 275A (Tj) 5.05mOhm @ 280A, 18V 4.4V @ 30mA 629nC @ 18V 18710pF @ 800V 549W -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
ADP480120W3

ADP480120W3

MOSFET 6N-CH 1200V 488A ACEPACK

STMicroelectronics

3,168 -
ADP480120W3

数据手册

ECOPACK® Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 488A (Tj) 2.6mOhm @ 480A, 18V 4.4V @ 50mA 1258nC @ 18V 37420pF @ 800V 869W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
ADP480120W3-L

ADP480120W3-L

MOSFET 6N-CH 1200V 488A ACEPACK

STMicroelectronics

1,285 -
ADP480120W3-L

数据手册

ECOPACK® Module Tray Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 488A (Tj) 2.6mOhm @ 480A, 18V 4.4V @ 50mA 1258nC @ 18V 37420pF @ 800V 869W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
M1F45M12W2-1LA

M1F45M12W2-1LA

MOSFET 4N-CH 1200V ACEPACK DMT

STMicroelectronics

9,108 -
M1F45M12W2-1LA

数据手册

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 64mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
STS1DNC45

STS1DNC45

MOSFET 2N-CH 450V 0.4A 8SOIC

STMicroelectronics

7,067 0.98
STS1DNC45

数据手册

SuperMESH™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 400mA 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 160pF @ 25V 1.6W 150°C (TJ) - - Surface Mount 8-SOIC
M1P45M12W2-1LA

M1P45M12W2-1LA

MOSFET 6N-CH 1200V ACEPACK DMT

STMicroelectronics

5,427 -
M1P45M12W2-1LA

数据手册

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 30A (Tc) 60.5mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
M1F80M12W2-1LA

M1F80M12W2-1LA

AUTOMOTIVE-GRADE ACEPACK DMT-32

STMicroelectronics

9,403 -
M1F80M12W2-1LA

数据手册

* - Tube Active - - - - - - - - - - - - - - -