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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FDMS3604AS

FDMS3604AS

MOSFET 2N-CH 30V 13A/23A POWER56

onsemi

4,937 0.97
FDMS3604AS

数据手册

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1695pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
FDMS7700S

FDMS7700S

MOSFET 2N-CH 30V 12A/22A POWER56

onsemi

6,017 1.59
FDMS7700S

数据手册

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 22A 7.5mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1750pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
FDMD82100

FDMD82100

MOSFET 2N-CH 100V 7A 12POWER

onsemi

8,540 0.80
FDMD82100

数据手册

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 7A 19mOhm @ 7A, 10V 4V @ 250µA 17nC @ 10V 1070pF @ 50V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
FDMD8280

FDMD8280

MOSFET 2N-CH 80V 11A 12POWER

onsemi

3,624 3.96

-

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 11A 8.2mOhm @ 11A, 10V 4V @ 250µA 44nC @ 10V 3050pF @ 40V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
FDMD8260LET60

FDMD8260LET60

MOSFET 2N-CH 60V 15A 12POWER

onsemi

7,272 2.50
FDMD8260LET60

数据手册

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V 1.1W -55°C ~ 175°C (TJ) - - Surface Mount 12-Power3.3x5
TC8020K6-G-M937

TC8020K6-G-M937

MOSFET 6N/6P-CH 200V 56QFN

Microchip Technology

2,429 7.00
TC8020K6-G-M937

数据手册

- 56-VFQFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 6 N and 6 P-Channel - 200V - 8Ohm @ 1A, 10V 2.4V @ 1mA - 50pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 56-QFN (8x8)
FAM65CR51XZ2

FAM65CR51XZ2

MOSFET 2N-CH 650V 64A APMCD-B16

onsemi

4,920 -
FAM65CR51XZ2

数据手册

- 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 64A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 463W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NXV10V160ST1

NXV10V160ST1

MOSFET 6N-CH 100V APM21-CGA

onsemi

5,399 -
NXV10V160ST1

数据手册

- 21-PowerDIP Module (1.370", 34.80mm) Tube Active MOSFET (Metal Oxide) 6 N-Channel - 100V - - 4.5V @ 250µA 101nC @ 10V 6970pF @ 50V - 175°C (TJ) - - Through Hole APM21-CGA
NXV08H250DT1

NXV08H250DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

6,371 -
NXV08H250DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H250DPT2

NXV08H250DPT2

MOSFET 4N-CH 80V APM17-MFA

onsemi

9,988 -
NXV08H250DPT2

数据手册

- 17-PowerDIP Module (2.020", 51.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - -40°C ~ 125°C Automotive AEC-Q101 Through Hole APM17-MFA
NXV08H300DT1

NXV08H300DT1

MOSFET 4N-CH 80V APM17-MDC

onsemi

2,437 -
NXV08H300DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.765mOhm @ 160A, 12V, 0.580mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H400XT2

NXV08H400XT2

MOSFET 4N-CH 80V APM17-MDA

onsemi

3,944 -
NXV08H400XT2

数据手册

- 17-PowerDIP Module (1.778", 45.15mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel - 80V - 0.765mOhm @ 160A, 12V, 0.710mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - 175°C (TJ) Automotive AEC-Q101 Through Hole APM17-MDA
NXV08B800DT1

NXV08B800DT1

MOSFET 80V APM17-MDC

onsemi

8,560 -
NXV08B800DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.46mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
NXV08H350XT1

NXV08H350XT1

MOSFET 80V APM17-MDC

onsemi

3,804 -
NXV08H350XT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.762mOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
APTC60DDAM70T1G

APTC60DDAM70T1G

MOSFET 2N-CH 600V 39A SP1

Microchip Technology

8,144 47.94
APTC60DDAM70T1G

数据手册

CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC80H29T3G

APTC80H29T3G

MOSFET 4N-CH 800V 15A SP3

Microchip Technology

4,794 48.28
APTC80H29T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 800V 15A 290mOhm @ 7.5A, 10V 3.9V @ 1mA 90nC @ 10V 2254pF @ 25V 156W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM10DSKM19T3G

APTM10DSKM19T3G

MOSFET 2N-CH 100V 70A SP3

Microchip Technology

3,320 51.70
APTM10DSKM19T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM50H15FT1G

APTM50H15FT1G

MOSFET 4N-CH 500V 25A SP1

Microchip Technology

5,712 52.52
APTM50H15FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 25A 180mOhm @ 21A, 10V 5V @ 1mA 170nC @ 10V 5448pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM60A11FT1G

APTM60A11FT1G

MOSFET 2N-CH 600V 40A SP1

Microchip Technology

4,773 53.72
APTM60A11FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 40A 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60AM45T1G

APTC60AM45T1G

MOSFET 2N-CH 600V 49A SP1

Microchip Technology

4,729 54.18
APTC60AM45T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1