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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTM100AM90FG

APTM100AM90FG

MOSFET 2N-CH 1000V 78A SP6

Microchip Technology

6,139 301.71
APTM100AM90FG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 78A 105mOhm @ 39A, 10V 5V @ 10mA 744nC @ 10V 20700pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120A15FG

APTM120A15FG

MOSFET 2N-CH 1200V 60A SP6

Microchip Technology

6,464 305.09
APTM120A15FG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100H18FG

APTM100H18FG

MOSFET 4N-CH 1000V 43A SP6

Microchip Technology

3,903 307.69
APTM100H18FG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120H29FG

APTM120H29FG

MOSFET 4N-CH 1200V 34A SP6

Microchip Technology

8,924 311.10
APTM120H29FG

数据手册

POWER MOS 7® SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100TA35SCTPG

APTM100TA35SCTPG

MOSFET 6N-CH 1000V 22A SP6-P

Microchip Technology

8,239 340.06
APTM100TA35SCTPG

数据手册

POWER MOS 7® Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
MSCSM120HM16CT3AG

MSCSM120HM16CT3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

9,755 423.58
MSCSM120HM16CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
APTC60TAM21SCTPAG

APTC60TAM21SCTPAG

MOSFET 6N-CH 600V 116A SP6-P

Microchip Technology

5,946 434.77
APTC60TAM21SCTPAG

数据手册

CoolMOS™ Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTMC170AM60CT1AG

APTMC170AM60CT1AG

MOSFET 2N-CH 1700V 50A SP1

Microchip Technology

9,853 -
APTMC170AM60CT1AG

数据手册

- SP1 Bulk Obsolete Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 50A (Tc) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V 350W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
MSCSM70HM05CAG

MSCSM70HM05CAG

SIC MOSFET

Microchip Technology

2,214 646.11

-

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM70TAM10CTPAG

MSCSM70TAM10CTPAG

MOSFET 6N-CH 700V 238A SP6-P

Microchip Technology

3,512 670.55
MSCSM70TAM10CTPAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM70AM025CT6AG

MSCSM70AM025CT6AG

MOSFET 700V 538A SP6C

Microchip Technology

8,918 674.36
MSCSM70AM025CT6AG

数据手册

- Module Tube Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount SP6C
MSCSM120TAM16CTPAG

MSCSM120TAM16CTPAG

MOSFET 6N-CH 1200V 171A SP6-P

Microchip Technology

8,055 683.59
MSCSM120TAM16CTPAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM120HM083CAG

MSCSM120HM083CAG

SIC MOSFET

Microchip Technology

3,522 690.70

-

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM120AM042CT6AG

MSCSM120AM042CT6AG

MOSFET 2N-CH 1200V 495A SP6C

Microchip Technology

7,444 717.55
MSCSM120AM042CT6AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70AM025CT6LIAG

MSCSM70AM025CT6LIAG

MOSFET 2N-CH 700V 689A SP6C LI

Microchip Technology

8,656 745.68
MSCSM70AM025CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N-Channel - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA (Typ) 1290nC @ 20V 27000pF @ 700V 1882W (Tc) - - - Chassis Mount SP6C LI
MSCSM70HM038CAG

MSCSM70HM038CAG

SIC MOSFET

Microchip Technology

3,042 817.48

-

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM120HM063CAG

MSCSM120HM063CAG

SIC MOSFET

Microchip Technology

5,267 876.93

-

- - Bulk Active - - - - - - - - - - - - - - -
MMDF2P02HDR2

MMDF2P02HDR2

MOSFET 2P-CH 20V 3.3A 8SOIC

onsemi

4,793 -
MMDF2P02HDR2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.3A 160mOhm @ 2A, 10V 2V @ 250µA 20nC @ 10V 588pF @ 16V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
MMDF3N04HDR2

MMDF3N04HDR2

MOSFET 2N-CH 40V 3.4A 8SOIC

onsemi

4,954 -
MMDF3N04HDR2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 3.4A 80mOhm @ 3.4A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 32V 1.39W - - - Surface Mount 8-SOIC
MMDF1N05ER2

MMDF1N05ER2

MOSFET 2N-CH 50V 2A 8SOIC

onsemi

8,393 -
MMDF1N05ER2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 2A 300mOhm @ 1.5A, 10V 3V @ 250µA 12.5nC @ 10V 330pF @ 25V 2W - - - Surface Mount 8-SOIC