| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CD4148DIODE GEN PURP 75V 200MA DIE Microchip Technology |
868 | 0.79 |
|
数据手册 |
- | Die | Tray | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | - | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
|
APT30DQ100KGDIODE GEN PURP 1KV 30A TO220 Microchip Technology |
1,231 | 0.77 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 30A | 3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 295 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
3,826 | 9.93 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5620DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
3,374 | 4.51 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5551DIODE GEN PURP 400V 5A AXIAL Microchip Technology |
1,418 | 17.20 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5711DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
4,849 | 4.62 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANTX1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
1,004 | 5.70 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5618USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
3,576 | 5.25 |
|
数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
4,288 | 13.52 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N6640USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
2,162 | 6.47 |
|
数据手册 |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |