图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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JANTX1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
8,229 | 3.98 |
|
![]() 数据手册 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | - | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5554USDIODE GEN PURP 1KV 3A B SQ-MELF Microchip Technology |
4,333 | 19.75 |
|
![]() 数据手册 |
- | SQ-MELF, B | Bulk | Active | Standard | 1000 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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UES1302DIODE GEN PURP 100V 6A AXIAL Microchip Technology |
9,703 | 21.89 |
|
![]() 数据手册 |
- | Axial | Bulk | Active | Standard | 100 V | 6A | 925 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | - | - | - | Through Hole | Axial | -55°C ~ 175°C |
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1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
8,521 | 4.10 |
|
![]() 数据手册 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
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1N6622USDIODE GEN PURP 660V 1.2A A-MELF Microchip Technology |
5,542 | 6.06 |
|
![]() 数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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JANHCA1N5819DIODE SCHOTTKY 45V 1A DO41 Microchip Technology |
2,541 | 18.94 |
|
![]() 数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | Military | MIL-PRF-19500/586 | Through Hole | DO-41 | -55°C ~ 110°C |
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JAN1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
3,463 | 12.77 |
|
![]() 数据手册 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N5617USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
2,292 | 6.48 |
|
![]() 数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N5615USDIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology |
7,427 | 6.66 |
|
![]() 数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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JAN1N6623USDIODE GEN PURP 880V 1A D-5A Microchip Technology |
2,256 | 9.24 |
|
![]() 数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 880 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |