产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5552E3

1N5552E3

DIODE GEN PURP 600V 5A B AXIAL

Microchip Technology

2,652 4.17

-

- B, Axial Bulk Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - - - Through Hole B, Axial -65°C ~ 175°C
1N5817

1N5817

5A SCHOTTKY RECTIFIER

Microchip Technology

9,976 0.34

-

* - Bulk Active - - - - - - - - - - - - -
1N5614US/TR

1N5614US/TR

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

7,927 4.17
1N5614US/TR

数据手册

- SQ-MELF, A Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Surface Mount D-5A -65°C ~ 200°C
1N5818

1N5818

DIODE SCHOTTKY 30V 1A DO41

Microchip Technology

7,704 0.11

-

- DO-204AL, DO-41, Axial Bulk Active Schottky 30 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V - - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N5817G

1N5817G

DIODE SCHOTTKY 20V 1A DO41

Microchip Technology

4,743 0.41

-

- DO-204AL, DO-41, Axial Bulk Active Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V - - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
JANTX1N3612/TR

JANTX1N3612/TR

DIODE GEN PURP 400V 1A

Microchip Technology

6,600 4.60

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JAN1N4247/TR

JAN1N4247/TR

DIODE GEN PURP 600V 1A

Microchip Technology

2,020 4.61

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
JAN1N5622

JAN1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,427 4.62
JAN1N5622

数据手册

- A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6642US

JAN1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

7,444 13.69
JAN1N6642US

数据手册

- SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 40pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5552/TR

1N5552/TR

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

2,938 4.17
1N5552/TR

数据手册

- B, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5805

1N5805

DIODE GEN PURP 125V 1A AXIAL

Microchip Technology

6,361 1.00
1N5805

数据手册

- A, Axial Bulk Discontinued at Digi-Key Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
APT100D60BG

APT100D60BG

DIODE GEN PURP 600V 100A TO247

Microchip Technology

3,867 3.80
APT100D60BG

数据手册

- TO-247-2 Bulk Active Standard 600 V 100A 2 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 250 µA @ 600 V - - - Through Hole TO-247 -55°C ~ 150°C
1N5551

1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,230 4.19
1N5551

数据手册

- B, Axial Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5711-1/TR

JAN1N5711-1/TR

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

6,050 4.66

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 70 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5803E3

1N5803E3

DIODE GEN PURP 80V 1A AXIAL

Microchip Technology

9,564 -

-

- Axial Bulk Active Standard 80 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole Axial -65°C ~ 175°C
1N5622/TR

1N5622/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,669 4.24
1N5622/TR

数据手册

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - - - Through Hole A, Axial -65°C ~ 200°C
STPSC806G-TR

STPSC806G-TR

DIODE SIL CARBIDE 600V 8A D2PAK

STMicroelectronics

5,255 3.33
STPSC806G-TR

数据手册

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 450pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
CDLL1A80

CDLL1A80

DIODE SCHOTTKY 80V 1A DO213AB

Microchip Technology

5,320 4.25
CDLL1A80

数据手册

- DO-213AB, MELF Bulk Active Schottky 80 V 1A 690 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 80 V - - - Surface Mount DO-213AB -
JANTX1N5620/TR

JANTX1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

8,837 4.63

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N5552/TR

JANTX1N5552/TR

DIODE GEN PURP 600V 5A

Microchip Technology

2,224 4.63
JANTX1N5552/TR

数据手册

- B, Axial Tape & Reel (TR) Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C