产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CD3A40

CD3A40

DIODE SCHOTTKY 40V 3A DIE

Microchip Technology

7,997 6.41
CD3A40

数据手册

- Die Tape & Reel (TR) Active Schottky 40 V 3A 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Surface Mount Die -65°C ~ 125°C
PCFFS15120AF

PCFFS15120AF

DIODE SIL CARBIDE 1.2KV 15A DIE

onsemi

5,009 12.27
PCFFS15120AF

数据手册

- Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.723 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V - - - Surface Mount Die 175°C (Max)
JANTXV1N4248

JANTXV1N4248

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

3,811 14.95
JANTXV1N4248

数据手册

- A, Axial Bulk Discontinued at Digi-Key Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N3070UR/TR

1N3070UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,000 -
1N3070UR/TR

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5554/TR

1N5554/TR

STD RECTIFIER

Microchip Technology

3,483 6.44
1N5554/TR

数据手册

- B, Axial Tape & Reel (TR) Active Standard 1000 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - - - Through Hole B, Axial -65°C ~ 175°C
CDLL5819E3

CDLL5819E3

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

4,905 6.41
CDLL5819E3

数据手册

- DO-213AB, MELF (Glass) Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 125°C
JANTX1N5619US/TR

JANTX1N5619US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

4,077 7.05

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5620US/TR

JANTX1N5620US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

3,668 7.10

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 175°C
1N5186US

1N5186US

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,112 6.47
1N5186US

数据手册

- B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 100 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5187US

1N5187US

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

7,555 6.47
1N5187US

数据手册

- B, Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5188US

1N5188US

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

7,439 6.47
1N5188US

数据手册

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5189US

1N5189US

DIODE GEN PURP 500V 3A D-5B

Microchip Technology

4,532 6.47
1N5189US

数据手册

- SQ-MELF, E Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - - - Surface Mount D-5B -65°C ~ 175°C
1N5196UR/TR

1N5196UR/TR

DIODE GP 225V 200MA DO213AA

Microchip Technology

6,344 6.47

-

- DO-213AA Tape & Reel (TR) Active Standard 225 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 225 V - - - Surface Mount DO-213AA -65°C ~ 175°C
UTR60

UTR60

DIODE GP 600V 500MA A AXIAL

Microchip Technology

8,124 -

-

- A, Axial Bulk Active Standard 600 V 500mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 600 V 40pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UT262

UT262

DIODE GEN PURP 200V 2A A AXIAL

Microchip Technology

3,590 -

-

- A, Axial Bulk Active Standard 200 V 2A 1 V @ 900 mA Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
UTR11

UTR11

DIODE GEN PURP 100V 1A A AXIAL

Microchip Technology

7,579 -

-

- A, Axial Bulk Active Standard 100 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 100 V 100pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR31

UTR31

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

9,123 -

-

- A, Axial Bulk Active Standard 300 V 1A 1.1 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 3 µA @ 300 V 70pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR22

UTR22

DIODE GEN PURP 200V 2A A AXIAL

Microchip Technology

4,878 -

-

- A, Axial Bulk Active Standard 200 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 200 V 80pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR12

UTR12

DIODE GEN PURP 100V 2A A AXIAL

Microchip Technology

3,022 -

-

- A, Axial Bulk Active Standard 100 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 3 µA @ 100 V 100pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR32

UTR32

DIODE GEN PURP 300V 2A A AXIAL

Microchip Technology

6,476 -

-

- A, Axial Bulk Active Standard 300 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 3 µA @ 300 V 70pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C