产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N6641US

JAN1N6641US

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

2,707 7.62
JAN1N6641US

数据手册

- SQ-MELF, E Bulk Active Standard 50 V 300mA 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Surface Mount D-5B -65°C ~ 175°C
1N5802US/TR

1N5802US/TR

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

5,386 6.86
1N5802US/TR

数据手册

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
JAN1N3595US/TR

JAN1N3595US/TR

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,021 7.56

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 125 V 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5418

JANTXV1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

8,318 7.58
JANTXV1N5418

数据手册

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5616US

JANTXV1N5616US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,107 -
JANTXV1N5616US

数据手册

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N4944

JANTXV1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

9,898 7.68
JANTXV1N4944

数据手册

- A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
JAN1N5554US

JAN1N5554US

DIODE GEN PURP 1KV 5A D-5B

Microchip Technology

2,169 7.74
JAN1N5554US

数据手册

- SQ-MELF, E Bulk Active Standard 1000 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JAN1N5553US

JAN1N5553US

DIODE GEN PURP 800V 3A D-5B

Microchip Technology

3,151 17.95
JAN1N5553US

数据手册

- SQ-MELF, E Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
1N5419E3

1N5419E3

DIODE GEN PURP 500V 3A AXIAL

Microchip Technology

7,250 -
1N5419E3

数据手册

- B, Axial Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5418/TR

JANTXV1N5418/TR

DIODE GEN PURP 400V 3A

Microchip Technology

5,101 7.70
JANTXV1N5418/TR

数据手册

- B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N5554US/TR

1N5554US/TR

DIODE GEN PURP 1KV 3A D-5B

Microchip Technology

5,235 7.01
1N5554US/TR

数据手册

- SQ-MELF, E Tape & Reel (TR) Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - - - Surface Mount D-5B -65°C ~ 175°C
JANTX1N5623US/TR

JANTX1N5623US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,874 7.70

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N5622US

JAN1N5622US

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

8,689 7.73
JAN1N5622US

数据手册

- SQ-MELF, A Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N5804USE3

1N5804USE3

DIODE GEN PURP 100V 1A A SQ-MELF

Microchip Technology

9,459 7.02
1N5804USE3

数据手册

- SQ-MELF, A Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Surface Mount A, SQ-MELF -65°C ~ 175°C
1N5804US/TR

1N5804US/TR

DIODE GEN PURP 100V 1A D-5A

Microchip Technology

3,229 7.02
1N5804US/TR

数据手册

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
JAN1N6641US/TR

JAN1N6641US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,768 -
JAN1N6641US/TR

数据手册

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JAN1N5819UR-1/TR

JAN1N5819UR-1/TR

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

5,153 7.74
JAN1N5819UR-1/TR

数据手册

- DO-213AB, MELF (Glass) Tape & Reel (TR) Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
JANTX1N6640/TR

JANTX1N6640/TR

DIODE GEN PURP 50V 300MA

Microchip Technology

2,461 7.74

-

- D, Axial Tape & Reel (TR) Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
JANTXV1N4942

JANTXV1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2,846 7.68
JANTXV1N4942

数据手册

- A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
1N5418E3

1N5418E3

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

4,849 6.99
1N5418E3

数据手册

- B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C