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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MX2N4393

MX2N4393

JFET N-CH

Microchip Technology

4,511 28.78

-

* - Bulk Active - - - - - - - - - - - - - -
2N4093

2N4093

JFET N-CH 40V TO18

Microchip Technology

7,394 -
2N4093

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Discontinued at Digi-Key N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) - - Through Hole TO-18
2N4092

2N4092

JFET N-CH 40V TO18

Microchip Technology

5,438 29.18
2N4092

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 15 mA @ 20 V - - 16pF @ 20V 50 Ohms 360 mW -65°C ~ 175°C (TJ) - - Through Hole TO-18
2N5114

2N5114

JFET P-CH 30V TO18

Microchip Technology

4,739 31.07
2N5114

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 90 mA @ 18 V - 10 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
2N5116

2N5116

JFET P-CH 30V TO18

Microchip Technology

4,665 4.38
2N5116

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Discontinued at Digi-Key P-Channel 30 V 30 V 25 mA @ 15 V - 4 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18
2N5115

2N5115

JFET P-CH 30V TO18

Microchip Technology

7,107 31.10
2N5115

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 60 mA @ 15 V - 6 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
2N5115E3

2N5115E3

JFET P-CH 30V TO18

Microchip Technology

3,540 31.25

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18 (TO-206AA)
2N3824

2N3824

JFET

Microchip Technology

2,381 32.15

-

* - Bulk Active - - - - - - - - - - - - - -
2N4091E3

2N4091E3

JFET N-CH

Microchip Technology

3,278 35.80

-

- - Bulk Active - - - - - - - - - - - - - -
2N4091

2N4091

JFET N-CH 40V TO18

Microchip Technology

8,539 35.66
2N4091

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 30 mA @ 20 V - - 16pF @ 20V 30 Ohms 360 mW -65°C ~ 175°C (TJ) - - Through Hole TO-18
MX2N4856

MX2N4856

JFET N-CH 40V TO18

Microchip Technology

6,860 37.62
MX2N4856

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 175 mA @ 15 V - 4 V @ 0.5 nA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
2N4092UB

2N4092UB

JFET N-CH 40V 3UB

Microchip Technology

8,153 38.54

-

- 3-SMD, No Lead Bulk Active N-Channel 40 V 40 V 15 mA @ 20 V - - 16pF @ 20V 50 Ohms 360 mW -65°C ~ 175°C (TJ) - - Surface Mount UB
2N4093UB

2N4093UB

JFET N-CH 40V 3UB

Microchip Technology

6,243 38.54

-

- 3-SMD, No Lead Bulk Active N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) - - Surface Mount UB
2N4092UB/TR

2N4092UB/TR

JFET N-CH 40V 3UB

Microchip Technology

4,756 38.68

-

- 3-SMD, No Lead Tape & Reel (TR) Active N-Channel 40 V 40 V 15 mA @ 20 V - - 16pF @ 20V 50 Ohms 360 mW -65°C ~ 175°C (TJ) - - Surface Mount UB
2N4093UB/TR

2N4093UB/TR

JFET N-CH 40V 3UB

Microchip Technology

3,050 38.68

-

- 3-SMD, No Lead Tape & Reel (TR) Active N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) - - Surface Mount UB
MV2N4392

MV2N4392

JFET N-CH

Microchip Technology

6,985 41.18

-

* - Bulk Active - - - - - - - - - - - - - -
MV2N4393

MV2N4393

JFET N-CH

Microchip Technology

7,773 41.18

-

* - Bulk Active - - - - - - - - - - - - - -
2N4391UBC/TR

2N4391UBC/TR

JFET

Microchip Technology

7,910 41.23

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
2N4391UBC

2N4391UBC

JFET N-CH UBC

Microchip Technology

6,233 41.23

-

- 3-SMD, No Lead Bulk Active N-Channel - - - - - - - - - - - Surface Mount UBC
2N4091UB

2N4091UB

JFET N-CH 40V 3UB

Microchip Technology

5,437 41.34

-

- 3-SMD, No Lead Bulk Active N-Channel 40 V 40 V 30 mA @ 20 V - - 16pF @ 20V 30 Ohms 360 mW -65°C ~ 175°C (TJ) - - Surface Mount UB