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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM70HM19CT3AG

MSCSM70HM19CT3AG

MOSFET 4N-CH 700V 124A SP3F

Microchip Technology

4,725 214.82
MSCSM70HM19CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
APTM10DHM05G

APTM10DHM05G

MOSFET 2N-CH 100V 278A SP6

Microchip Technology

7,711 195.29
APTM10DHM05G

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 100V 278A 5mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTC80AM75SCG

APTC80AM75SCG

MOSFET 2N-CH 800V 56A SP6

Microchip Technology

6,380 213.42
APTC80AM75SCG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 800V 56A 75mOhm @ 28A, 10V 3.9V @ 4mA 364nC @ 10V 9015pF @ 25V 568W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTC60TAM35PG

APTC60TAM35PG

MOSFET 6N-CH 600V 72A SP6-P

Microchip Technology

6,769 208.28
APTC60TAM35PG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTC60TDUM35PG

APTC60TDUM35PG

MOSFET 6N-CH 600V 72A SP6-P

Microchip Technology

4,707 208.28
APTC60TDUM35PG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM20DUM05G

APTM20DUM05G

MOSFET 2N-CH 200V 317A SP6

Microchip Technology

9,227 213.05
APTM20DUM05G

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 317A 6mOhm @ 158.5A, 10V 5V @ 10mA 448nC @ 10V 27400pF @ 25V 1136W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM20TAM16FPG

APTM20TAM16FPG

MOSFET 6N-CH 200V 104A SP6-P

Microchip Technology

6,015 216.47
APTM20TAM16FPG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 200V 104A 19mOhm @ 52A, 10V 5V @ 2.5mA 140nC @ 10V 7220pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM10TAM09FPG

APTM10TAM09FPG

MOSFET 6N-CH 100V 139A SP6-P

Microchip Technology

8,394 220.38

-

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM20AM06SG

APTM20AM06SG

MOSFET 2N-CH 200V 300A SP6

Microchip Technology

2,452 224.98
APTM20AM06SG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 300A 7.2mOhm @ 150A, 10V 5V @ 6mA 325nC @ 10V 18500pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM20AM05FG

APTM20AM05FG

MOSFET 2N-CH 200V 317A SP6

Microchip Technology

8,481 225.51
APTM20AM05FG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 317A 5mOhm @ 158.5A, 10V 5V @ 10mA 448nC @ 10V 27400pF @ 25V 1136W -40°C ~ 150°C (TJ) - - Chassis Mount SP6