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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTC80A15SCTG

APTC80A15SCTG

MOSFET 2N-CH 800V 28A SP4

Microchip Technology

8,906 114.62
APTC80A15SCTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTC80A10SCTG

APTC80A10SCTG

MOSFET 2N-CH 800V 42A SP4

Microchip Technology

5,743 123.50
APTC80A10SCTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 800V 42A 100mOhm @ 21A, 10V 3.9V @ 3mA 273nC @ 10V 6761pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
MSCC60VRM99CT3AG

MSCC60VRM99CT3AG

MOSFET 600V 19A SP3F

Microchip Technology

7,764 127.24
MSCC60VRM99CT3AG

数据手册

- Module Tube Active - - - 600V 19A (Tc) - - - - - - - - Chassis Mount SP3F
APTM20AM10FTG

APTM20AM10FTG

MOSFET 2N-CH 200V 175A SP4

Microchip Technology

3,590 119.22
APTM20AM10FTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 175A 12mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V 13700pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM20HM20FTG

APTM20HM20FTG

MOSFET 4N-CH 200V 89A SP4

Microchip Technology

8,659 120.42
APTM20HM20FTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 89A 24mOhm @ 44.5A, 10V 5V @ 2.5mA 112nC @ 10V 6850pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM10HM09FT3G

APTM10HM09FT3G

MOSFET 4N-CH 100V 139A SP3

Microchip Technology

9,708 121.41
APTM10HM09FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM08TAM04PG

APTM08TAM04PG

MOSFET 6N-CH 75V 120A SP6-P

Microchip Technology

8,568 123.02
APTM08TAM04PG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 120A 4.5mOhm @ 60A, 10V 4V @ 1mA 153nC @ 10V 4530pF @ 25V 138W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM100H45FT3G

APTM100H45FT3G

MOSFET 4N-CH 1000V 18A SP3

Microchip Technology

3,715 123.59
APTM100H45FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 18A 540mOhm @ 9A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM70VM19C3AG

MSCSM70VM19C3AG

MOSFET 2N-CH 700V 124A SP3F

Microchip Technology

6,872 136.34
MSCSM70VM19C3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
APTM50AM38FTG

APTM50AM38FTG

MOSFET 2N-CH 500V 90A SP4

Microchip Technology

3,471 128.76
APTM50AM38FTG

数据手册

POWER MOS 7® SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4