产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTC60DDAM35T3G

APTC60DDAM35T3G

MOSFET 2N-CH 600V 72A SP3

Microchip Technology

9,626 84.12
APTC60DDAM35T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM50DDAM65T3G

APTM50DDAM65T3G

MOSFET 2N-CH 500V 51A SP3

Microchip Technology

2,861 85.78
APTM50DDAM65T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V 7000pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM70AM19CT1AG

MSCSM70AM19CT1AG

MOSFET 2N-CH 700V 124A SP1F

Microchip Technology

3,260 101.43
MSCSM70AM19CT1AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
APTC60HM70BT3G

APTC60HM70BT3G

MOSFET 4N-CH 600V 39A SP3

Microchip Technology

5,717 94.12
APTC60HM70BT3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) Logic Level Gate 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 700pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM50H10FT3G

APTM50H10FT3G

MOSFET 4N-CH 500V 37A SP3

Microchip Technology

8,892 96.55
APTM50H10FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 37A 120mOhm @ 18.5A, 10V 5V @ 1mA 96nC @ 10V 4367pF @ 25V 312W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60DHM24T3G

APTC60DHM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

7,386 101.92
APTC60DHM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM50HM75FT3G

APTM50HM75FT3G

MOSFET 4N-CH 500V 46A SP3

Microchip Technology

6,805 104.23
APTM50HM75FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5600pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60DDAM24T3G

APTC60DDAM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

9,958 104.74
APTC60DDAM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60VDAM24T3G

APTC60VDAM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

3,376 104.74
APTC60VDAM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60BBM24T3G

APTC60BBM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

9,007 106.86
APTC60BBM24T3G

数据手册

CoolMOS™ SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - - SP3