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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTM60A11FT1G

APTM60A11FT1G

MOSFET 2N-CH 600V 40A SP1

Microchip Technology

4,773 53.72
APTM60A11FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 40A 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60AM45T1G

APTC60AM45T1G

MOSFET 2N-CH 600V 49A SP1

Microchip Technology

4,729 54.18
APTC60AM45T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM60H23FT1G

APTM60H23FT1G

MOSFET 4N-CH 600V 20A SP1

Microchip Technology

7,326 54.50
APTM60H23FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 20A 276mOhm @ 17A, 10V 5V @ 1mA 165nC @ 10V 5316pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC80DDA15T3G

APTC80DDA15T3G

MOSFET 2N-CH 800V 28A SP3

Microchip Technology

4,445 54.81
APTC80DDA15T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC80H15T1G

APTC80H15T1G

MOSFET 4N-CH 800V 28A SP1

Microchip Technology

2,759 58.94
APTC80H15T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60DDAM45T1G

APTC60DDAM45T1G

MOSFET 2N-CH 600V 49A SP1

Microchip Technology

4,096 59.10
APTC60DDAM45T1G

数据手册

CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60VDAM45T1G

APTC60VDAM45T1G

MOSFET 2N-CH 600V 49A SP1

Microchip Technology

2,203 59.10
APTC60VDAM45T1G

数据手册

CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM120H140FT1G

APTM120H140FT1G

MOSFET 4N-CH 1200V 8A SP1

Microchip Technology

4,727 59.50
APTM120H140FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 8A 1.68Ohm @ 7A, 10V 5V @ 1mA 145nC @ 10V 3812pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60AM35T1G

APTC60AM35T1G

MOSFET 2N-CH 600V 72A SP1

Microchip Technology

2,956 63.20
APTC60AM35T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM50DDA10T3G

APTM50DDA10T3G

MOSFET 2N-CH 500V 37A SP3

Microchip Technology

7,700 64.05
APTM50DDA10T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 500V 37A 120mOhm @ 18.5A, 10V 5V @ 1mA 96nC @ 10V 4367pF @ 25V 312W -40°C ~ 150°C (TJ) - - Chassis Mount SP3