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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120DDUM31TBL2NG

MSCSM120DDUM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

8,448 208.70
MSCSM120DDUM31TBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CT3AG

MSCSM120VR1M16CT3AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

6,962 -
MSCSM120VR1M16CT3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31CTBL2NG

MSCSM120HM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

7,468 250.73
MSCSM120HM31CTBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM31CTBL2NG

MSCSM120DDUM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

6,453 250.73
MSCSM120DDUM31CTBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM31T3AG

MSCSM120TAM31T3AG

MOSFET 6N-CH 1200V 89A

Microchip Technology

7,863 259.40
MSCSM120TAM31T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM11T3AG

MSCSM120AM11T3AG

MOSFET 2N-CH 1200V 254A

Microchip Technology

9,957 262.86
MSCSM120AM11T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM16T3AG

MSCSM120HM16T3AG

MOSFET 4N-CH 1200V 173A

Microchip Technology

8,197 334.78
MSCSM120HM16T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM08T3AG

MSCSM120AM08T3AG

MOSFET 2N-CH 1200V 337A

Microchip Technology

9,113 334.78
MSCSM120AM08T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 12mA 928nC @ 20V 12100pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M07CT6AG

MSCSM70VR1M07CT6AG

MOSFET 2N-CH 700V 349A

Microchip Technology

2,976 -
MSCSM70VR1M07CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M11CT6AG

MSCSM120VR1M11CT6AG

MOSFET 2N-CH 1200V 251A

Microchip Technology

9,541 -
MSCSM120VR1M11CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -