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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170HM087CAG

MSCSM170HM087CAG

MOSFET 4N-CH 1700V 238A

Microchip Technology

2,919 1078.34
MSCSM170HM087CAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.114kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

4,516 1098.86
MSCSM170AM039CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170HRM451AG

MSCSM170HRM451AG

MOSFET 4N-CH 1700V/1200V 64A

Microchip Technology

4,164 -
MSCSM170HRM451AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM311AG

MSCSM120HRM311AG

MOSFET 4N-CH 1200V/700V 89A

Microchip Technology

4,575 -
MSCSM120HRM311AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170HRM233AG

MSCSM170HRM233AG

MOSFET 4N-CH 1700V/1200V 124A

Microchip Technology

4,194 -
MSCSM170HRM233AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V 3.2V @ 5mA, 2.8V @ 3mA 356nC @ 20V, 232nC @ 20V 6600pF @ 1000V, 3020pF @ 1000V 602W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM163AG

MSCSM120HRM163AG

MOSFET 4N-CH 1200V/700V 173A

Microchip Technology

3,821 -
MSCSM120HRM163AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 173A (Tc), 124A (Tc) 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V 2.8V @ 6mA, 2.4V @ 4mA 464nC, 215nC @ 20V 6040pF @ 1000V, 4500pF @ 700V 745W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
APTM100A13SCG

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology

1,303 289.75

-

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
MSCSM170HRM11NG

MSCSM170HRM11NG

MOSFET 4N-CH 1700V/1200V 226A

Microchip Technology

3,656 -
MSCSM170HRM11NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6AG

MSCSM120AM042T6AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

3,344 -
MSCSM120AM042T6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM08NG

MSCSM120HRM08NG

MOSFET 4N-CH 1200V/700V 317A

Microchip Technology

2,680 -
MSCSM120HRM08NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -