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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,193 118.85
MSCSM120DUM31TBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

2,052 118.85
MSCSM120AM31TBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM50T3AG

MSCSM120HM50T3AG

MOSFET 4N-CH 1200V 55A

Microchip Technology

6,679 123.96
MSCSM120HM50T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

9,240 -
MSCSM120VR1M31C1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

8,165 140.67
MSCSM120DUM31CTBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,104 140.67
MSCSM120AM31CTBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM16T1AG

MSCSM120AM16T1AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

5,028 153.38
MSCSM120AM16T1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

5,827 156.74
MSCSM120DHM31CTBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31T3AG

MSCSM120HM31T3AG

MOSFET 4N-CH 1200V 89A

Microchip Technology

8,784 187.67
MSCSM120HM31T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31TBL2NG

MSCSM120HM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

5,760 208.70
MSCSM120HM31TBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -