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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120AM50CT1AG

MSCSM120AM50CT1AG

MOSFET 2N-CH 1200V 55A SP1F

Microchip Technology

8,032 75.95
MSCSM120AM50CT1AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
MSCSM70AM10CT3AG

MSCSM70AM10CT3AG

MOSFET 2N-CH 700V 241A SP3F

Microchip Technology

6,864 216.86
MSCSM70AM10CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170AM23CT1AG

MSCSM170AM23CT1AG

MOSFET 2N-CH 1700V 124A

Microchip Technology

8,228 221.62
MSCSM170AM23CT1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM11CT3AG

MSCSM170AM11CT3AG

MOSFET 2N-CH 1700V 240A

Microchip Technology

2,547 454.27
MSCSM170AM11CT3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.14kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170DUM058AG

MSCSM170DUM058AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

4,419 485.29
MSCSM170DUM058AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1642W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170DUM039AG

MSCSM170DUM039AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

2,053 656.30

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2400W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM027AG

MSCSM120DUM027AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

1,008 788.98

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @ 1000V 2968W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02CT6LIAG

MSCSM120AM02CT6LIAG

MOSFET 2N-CH 1200V 947A SP6C LI

Microchip Technology

4,483 1318.86
MSCSM120AM02CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 12mA 2784nC @ 20V 36240pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCSM120AM31T1AG

MSCSM120AM31T1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

5,778 91.78
MSCSM120AM31T1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M19C1AG

MSCSM70VR1M19C1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

9,305 -
MSCSM70VR1M19C1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -