产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM70TLM10C3AG

MSCSM70TLM10C3AG

MOSFET 4N-CH 700V 241A MODULE

Microchip Technology

3,435 325.16

-

- Module Box Active Silicon Carbide (SiC) 4 N-Channel - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA (Typ) 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Through Hole Module
MSCSM120AM11CT3AG

MSCSM120AM11CT3AG

MOSFET 2N-CH 1200V 254A SP3F

Microchip Technology

2,897 327.63
MSCSM120AM11CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCM20AM058G

MSCM20AM058G

MOSFET 2N-CH 200V 280A LP8

Microchip Technology

2,152 335.92
MSCM20AM058G

数据手册

- Module Box Active MOSFET (Metal Oxide) 2 N Channel (Phase Leg) - 200V 280A (Tc) - - - - - - - - Chassis Mount LP8
MSCSM170TLM15CAG

MSCSM170TLM15CAG

MOSFET 4N-CH 1700V 179A SP6C

Microchip Technology

1,100 613.62

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70TLM07CAG

MSCSM70TLM07CAG

MOSFET 4N-CH 700V 349A SP6C

Microchip Technology

2,598 627.78

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70VR1M10CTPAG

MSCSM70VR1M10CTPAG

MOSFET 6N-CH 700V 238A

Microchip Technology

1,487 -
MSCSM70VR1M10CTPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TLM11CAG

MSCSM120TLM11CAG

MOSFET 4N-CH 1200V 251A SP6C

Microchip Technology

1,447 683.34

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9000pF @ 1000V 1042W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM170TLM11CAG

MSCSM170TLM11CAG

MOSFET 4N-CH 1700V 238A SP6C

Microchip Technology

1,129 764.74

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1114W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM120TLM08CAG

MSCSM120TLM08CAG

MOSFET 4N-CH 1200V 333A SP6C

Microchip Technology

2,282 857.70

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12000pF @ 1000V 1378W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM120AM027CT6AG

MSCSM120AM027CT6AG

MOSFET 2N-CH 1200V 733A SP6C

Microchip Technology

2,275 1011.55
MSCSM120AM027CT6AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C