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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170DUM23T3AG

MSCSM170DUM23T3AG

MOSFET 2N-CH 1700V 124A SP3F

Microchip Technology

3,593 160.49

-

- Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70HM19T3AG

MSCSM70HM19T3AG

MOSFET 4N-CH 700V 124A

Microchip Technology

4,464 172.27
MSCSM70HM19T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70DUM10T3AG

MSCSM70DUM10T3AG

MOSFET 2N-CH 700V 241A SP3F

Microchip Technology

3,885 174.58

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70AM10T3AG

MSCSM70AM10T3AG

MOSFET 2N-CH 700V 241A

Microchip Technology

1,911 174.58
MSCSM70AM10T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM16T3AG

MSCSM120DUM16T3AG

MOSFET 2N-CH 1200V 173A SP3F

Microchip Technology

1,504 189.98

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170TLM45C3AG

MSCSM170TLM45C3AG

MOSFET 4N-CH 1700V 64A SP3F

Microchip Technology

2,665 195.82

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170DUM15T3AG

MSCSM170DUM15T3AG

MOSFET 2N-CH 1700V 181A SP3F

Microchip Technology

2,868 218.64

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70TAM19T3AG

MSCSM70TAM19T3AG

MOSFET 6N-CH 700V 124A

Microchip Technology

1,209 236.30
MSCSM70TAM19T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM07T3AG

MSCSM70AM07T3AG

MOSFET 2N-CH 700V 353A

Microchip Technology

3,728 239.78
MSCSM70AM07T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70DUM07T3AG

MSCSM70DUM07T3AG

MOSFET 2N-CH 700V 353A SP3F

Microchip Technology

4,829 239.78

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F