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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
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结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120DUM042AG

MSCSM120DUM042AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

2,067 573.74

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1000V 2031W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170TAM23CTPAG

MSCSM170TAM23CTPAG

MOSFET 6N-CH 1700V 122A

Microchip Technology

1,116 689.14
MSCSM170TAM23CTPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1700V (1.7kV) 122A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 588W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042CT6LIAG

MSCSM120AM042CT6LIAG

MOSFET 2N-CH 1200V 495A SP6C LI

Microchip Technology

2,540 782.59
MSCSM120AM042CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1kV 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

MOSFET 2N-CH 1200V 495A D3

Microchip Technology

2,513 792.05
MSCSM120AM042CD3AG

数据手册

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
MSCSM70TLM05CAG

MSCSM70TLM05CAG

MOSFET 4N-CH 700V 464A SP6C

Microchip Technology

4,303 797.08

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1277W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM170HM12CAG

MSCSM170HM12CAG

MOSFET 4N-CH 1700V 179A

Microchip Technology

3,182 842.98
MSCSM170HM12CAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM058CT6AG

MSCSM170AM058CT6AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

4,218 843.14
MSCSM170AM058CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170TAM15CTPAG

MSCSM170TAM15CTPAG

MOSFET 6N-CH 1700V 179A

Microchip Technology

1,024 898.18
MSCSM170TAM15CTPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG

MOSFET 6N-CH 1200V 251A SP6-P

Microchip Technology

3,231 911.07
MSCSM120TAM11CTPAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM120AM03CT6LIAG

MSCSM120AM03CT6LIAG

MOSFET 2N-CH 1200V 805A SP6C LI

Microchip Technology

4,955 1124.70
MSCSM120AM03CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 10mA 2320nC @ 20V 30200pF @ 1kV 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI