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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM70HM038AG

MSCSM70HM038AG

MOSFET 4N-CH 700V 464A

Microchip Technology

8,657 662.08
MSCSM70HM038AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 -
MSCSM120VR1M062CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM063AG

MSCSM120HM063AG

MOSFET 4N-CH 1200V 333A

Microchip Technology

5,753 723.66
MSCSM120HM063AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

6,532 -
MSCSM120VR1M16CTPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM11TPAG

MSCSM120TAM11TPAG

MOSFET 6N-CH 1200V 251A

Microchip Technology

5,406 794.25
MSCSM120TAM11TPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027T6AG

MSCSM120AM027T6AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

8,830 794.56
MSCSM120AM027T6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027D3AG

MSCSM120AM027D3AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

5,173 850.13
MSCSM120AM027D3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

MOSFET 2N-CH 1200V 805A

Microchip Technology

2,067 932.18
MSCSM120AM03T6LIAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

MOSFET 2N-CH 1200V 947A

Microchip Technology

8,818 1082.85
MSCSM120AM02T6LIAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

MOSFET 2N-CH 1200V 733A D3

Microchip Technology

3,073 1112.70
MSCSM120AM027CD3AG

数据手册

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3