图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMFWD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN |
6,000 | - |
|
- |
- | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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FDS6892APOWER FIELD-EFFECT TRANSISTOR, 7 |
4,514 | 0.41 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CSD86356Q5DMOSFET 25V |
12,500 | 0.96 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMS3616SSMALL SIGNAL FIELD-EFFECT TRANSI |
6,000 | 0.62 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6912POWER FIELD-EFFECT TRANSISTOR, 6 |
20,207 | 0.66 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NVMFD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN |
9,000 | - |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NTMFD0D9N02P1EMOSFET 2N-CH 30V/25V 14A 8PQFN |
161,223 | - |
|
- |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | - | 30V, 25V | 14A (Ta), 30A (Ta) | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V | 2V @ 340µA, 2V @ 1mA | 9nC @ 4.5V, 30nC @ 4.5V | 1400pF @ 15V, 5050pF @ 13V | 960mW (Ta), 1.04W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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NVMFWD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN |
9,000 | - |
|
- |
- | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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FDMS1D2N03DSDMOSFET |
52,964 | 0.95 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NVMFD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN |
6,000 | - |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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CSD86356Q5DTMOSFET 25V |
7,250 | 1.15 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXH020U90MNF2PTGMOSFET 2N-CH 900V 149A |
3,924 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 900V | 149A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 352W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
APTM50AM24SGMOSFET 2N-CH 500V 150A SP6 |
3,589 | 229.50 |
|
![]() 数据手册 |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 500V | 150A | 28mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20AM04FGMOSFET 2N-CH 200V 372A SP6 |
2,193 | 274.54 |
|
![]() 数据手册 |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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MSCSM170AM058CD3AGMOSFET 2N-CH 1700V 353A |
1,602 | 929.80 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CSD85301Q2TMOSFET 2N-CH 20V 5A 6WSON |
1,024 | 1.01 |
|
![]() 数据手册 |
NexFET™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 5V Drive | 20V | 5A | 27mOhm @ 5A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 469pF @ 10V | 2.3W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WSON (2x2) |
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NVXK2VR40WXT2MOSFET 6N-CH 1200V 55A APM32 |
1,306 | - |
|
![]() 数据手册 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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MSCSM170HM23CT3AGMOSFET 4N-CH 1700V 124A |
3,259 | 502.12 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NVVR26A120M1WSBMOSFET 2N-CH 1200V AHPM15-CDE |
2,303 | - |
|
![]() 数据手册 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDE |
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NVVR26A120M1WSSMOSFET 2N-CH 1200V AHPM15-CDI |
3,577 | - |
|
![]() 数据手册 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDI |