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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMFWD040N10MCLT1G

NVMFWD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -

-

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDS6892A

FDS6892A

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi

4,514 0.41
FDS6892A

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
CSD86356Q5D

CSD86356Q5D

MOSFET 25V

Texas Instruments

12,500 0.96
CSD86356Q5D

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
FDMS3616S

FDMS3616S

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

6,000 0.62
FDMS3616S

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
FDS6912

FDS6912

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi

20,207 0.66
FDS6912

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NVMFD010N10MCLT1G

NVMFD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD0D9N02P1E

NTMFD0D9N02P1E

MOSFET 2N-CH 30V/25V 14A 8PQFN

onsemi

161,223 -

-

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC @ 4.5V, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
NVMFWD010N10MCLT1G

NVMFWD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -

-

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDMS1D2N03DSD

FDMS1D2N03DSD

MOSFET

onsemi

52,964 0.95
FDMS1D2N03DSD

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NVMFD040N10MCLT1G

NVMFD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
CSD86356Q5DT

CSD86356Q5DT

MOSFET 25V

Texas Instruments

7,250 1.15
CSD86356Q5DT

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NXH020U90MNF2PTG

NXH020U90MNF2PTG

MOSFET 2N-CH 900V 149A

onsemi

3,924 -
NXH020U90MNF2PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V 149A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 352W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
APTM50AM24SG

APTM50AM24SG

MOSFET 2N-CH 500V 150A SP6

Microchip Technology

3,589 229.50
APTM50AM24SG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM20AM04FG

APTM20AM04FG

MOSFET 2N-CH 200V 372A SP6

Microchip Technology

2,193 274.54
APTM20AM04FG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
MSCSM170AM058CD3AG

MSCSM170AM058CD3AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

1,602 929.80
MSCSM170AM058CD3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CSD85301Q2T

CSD85301Q2T

MOSFET 2N-CH 20V 5A 6WSON

Texas Instruments

1,024 1.01
CSD85301Q2T

数据手册

NexFET™ 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 5V Drive 20V 5A 27mOhm @ 5A, 4.5V 1.2V @ 250µA 5.4nC @ 4.5V 469pF @ 10V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 6-WSON (2x2)
NVXK2VR40WXT2

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

1,306 -
NVXK2VR40WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

MOSFET 4N-CH 1700V 124A

Microchip Technology

3,259 502.12
MSCSM170HM23CT3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVVR26A120M1WSB

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

2,303 -
NVVR26A120M1WSB

数据手册

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

3,577 -
NVVR26A120M1WSS

数据手册

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI