图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APTM50H14FT3GMOSFET 4N-CH 500V 26A SP3 |
1,654 | 76.65 |
|
![]() 数据手册 |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 26A | 168mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | 208W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTC60DSKM24T3GMOSFET 2N-CH 600V 95A SP3 |
4,585 | 104.74 |
|
![]() 数据手册 |
CoolMOS™ | SP3 | Tray | Active | MOSFET (Metal Oxide) | 2 N Channel (Dual Buck Chopper) | - | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTM50HM65FT3GMOSFET 4N-CH 500V 51A SP3 |
1,456 | 124.88 |
|
![]() 数据手册 |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTM50AM38STGMOSFET 2N-CH 500V 90A SP4 |
4,044 | 141.98 |
|
![]() 数据手册 |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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MSCSM70TLM19C3AGMOSFET 4N-CH 700V 124A SP3F |
1,125 | 193.44 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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MSCSM70VR1M10CT3AGMOSFET 2N-CH 700V 241A |
1,213 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCM20XM10T3XGMOSFET 6N-CH 200V 108A SP3X |
2,930 | 215.54 |
|
![]() 数据手册 |
- | Module | Bulk | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 200V | 108A (Tc) | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10700pF @ 50V | 341W (Tc) | -40°C ~ 125°C (Tc) | - | - | Chassis Mount | SP3X |
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MSCSM120HM31CT3AGMOSFET 4N-CH 1200V 89A SP3F |
4,553 | 228.78 |
|
- |
- | Module | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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MSCSM70AM07CT3AGMOSFET 2N-CH 700V 353A SP3F |
1,111 | 306.71 |
|
![]() 数据手册 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 700V | 353A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 988W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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MSCSM70TLM10C3AGMOSFET 4N-CH 700V 241A MODULE |
3,435 | 325.16 |
|
- |
- | Module | Box | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA (Typ) | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | Module |
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MSCSM120AM11CT3AGMOSFET 2N-CH 1200V 254A SP3F |
2,897 | 327.63 |
|
![]() 数据手册 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | 1.067kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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MSCM20AM058GMOSFET 2N-CH 200V 280A LP8 |
2,152 | 335.92 |
|
![]() 数据手册 |
- | Module | Box | Active | MOSFET (Metal Oxide) | 2 N Channel (Phase Leg) | - | 200V | 280A (Tc) | - | - | - | - | - | - | - | - | Chassis Mount | LP8 |
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MSCSM170TLM15CAGMOSFET 4N-CH 1700V 179A SP6C |
1,100 | 613.62 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV) | 179A (Tc) | 15mOhm @ 90A, 20V | 3.2V @ 7.5mA | 534nC @ 20V | 9900pF @ 1000V | 843W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM70TLM07CAGMOSFET 4N-CH 700V 349A SP6C |
2,598 | 627.78 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 700V | 349A (Tc) | 6.4mOhm @ 120A, 20V | 2.4V @ 12mA | 645nC @ 20V | 13500pF @ 700V | 966W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM70VR1M10CTPAGMOSFET 6N-CH 700V 238A |
1,487 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | - | 700V | 238A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 674W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120TLM11CAGMOSFET 4N-CH 1200V 251A SP6C |
1,447 | 683.34 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9000pF @ 1000V | 1042W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM170TLM11CAGMOSFET 4N-CH 1700V 238A SP6C |
1,129 | 764.74 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV) | 238A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1114W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM120TLM08CAGMOSFET 4N-CH 1200V 333A SP6C |
2,282 | 857.70 |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV) | 333A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12000pF @ 1000V | 1378W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM120AM027CT6AGMOSFET 2N-CH 1200V 733A SP6C |
2,275 | 1011.55 |
|
![]() 数据手册 |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
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MSCSM170HM087CAGMOSFET 4N-CH 1700V 238A |
2,919 | 1078.34 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1700V (1.7kV) | 238A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1.114kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |