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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

4,516 1098.86
MSCSM170AM039CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
ADP360120W3

ADP360120W3

MOSFET 6N-CH 1200V 379A ACEPACK

STMicroelectronics

3,561 -
ADP360120W3

数据手册

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 379A (Tj) 3.45mOhm @ 360A, 18V 4.4V @ 40mA 944nC @ 18V 28070pF @ 800V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK
FAM65CR51DZ1

FAM65CR51DZ1

MOSFET 2N-CH 650V 33A APMCD-B16

onsemi

3,347 -
FAM65CR51DZ1

数据手册

- 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 160W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
SH63N65DM6AG

SH63N65DM6AG

MOSFET 2N-CH 650V 53A 9ACEPACK

STMicroelectronics

2,377 -
SH63N65DM6AG

数据手册

ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 53A (Tc) 64mOhm @ 23A, 10V 4.75V @ 250µA 80nC @ 10V 3344pF @ 100V 424W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
NXH015P120M3F1PTG

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

3,162 -
NXH015P120M3F1PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008P120M3F1PG

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

4,639 -
NXH008P120M3F1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH011F120M3F2PTHG

NXH011F120M3F2PTHG

MOSFET 4N-CH 1200V 105A 34PIM

onsemi

3,547 -
NXH011F120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
NXH007F120M3F2PTHG

NXH007F120M3F2PTHG

MOSFET 4N-CH 1200V 149A 34PIM

onsemi

1,960 -
NXH007F120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
MSCSM170HRM451AG

MSCSM170HRM451AG

MOSFET 4N-CH 1700V/1200V 64A

Microchip Technology

4,164 -
MSCSM170HRM451AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008T120M3F2PTHG

NXH008T120M3F2PTHG

MOSFET 4N-CH 1200V 129A 29PIM

onsemi

3,907 -
NXH008T120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
MSCSM120HRM311AG

MSCSM120HRM311AG

MOSFET 4N-CH 1200V/700V 89A

Microchip Technology

4,575 -
MSCSM120HRM311AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH004P120M3F2PNG

NXH004P120M3F2PNG

MOSFET 2N-CH 1200V 338A 36PIM

onsemi

3,546 -
NXH004P120M3F2PNG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.098W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
MSCSM170HRM233AG

MSCSM170HRM233AG

MOSFET 4N-CH 1700V/1200V 124A

Microchip Technology

4,194 -
MSCSM170HRM233AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V 3.2V @ 5mA, 2.8V @ 3mA 356nC @ 20V, 232nC @ 20V 6600pF @ 1000V, 3020pF @ 1000V 602W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM163AG

MSCSM120HRM163AG

MOSFET 4N-CH 1200V/700V 173A

Microchip Technology

3,821 -
MSCSM120HRM163AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 173A (Tc), 124A (Tc) 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V 2.8V @ 6mA, 2.4V @ 4mA 464nC, 215nC @ 20V 6040pF @ 1000V, 4500pF @ 700V 745W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
APTM100A13SCG

APTM100A13SCG

MOSFET 2N-CH 1000V 65A SP6

Microchip Technology

1,303 289.75

-

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
MSCSM170HRM11NG

MSCSM170HRM11NG

MOSFET 4N-CH 1700V/1200V 226A

Microchip Technology

3,656 -
MSCSM170HRM11NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V 3.2V @ 10mA, 2.8V @ 6mA 712nC @ 20V, 464nC @ 20V 13200pF @ 1000V, 6040pF @ 1000V 1.012kW (Tc), 662W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6AG

MSCSM120AM042T6AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

3,344 -
MSCSM120AM042T6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HRM08NG

MSCSM120HRM08NG

MOSFET 4N-CH 1200V/700V 317A

Microchip Technology

2,680 -
MSCSM120HRM08NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V 2.8V @ 12mA, 2.4V @ 8mA 928nC @ 20V, 430nC @ 20V 12100pF @ 1000V, 9000pF @ 700V 1.253kW (Tc), 613W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVVR26A120M1WST

NVVR26A120M1WST

MOSFET 2N-CH 1200V AHPM15-CDA

onsemi

3,703 -
NVVR26A120M1WST

数据手册

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDA
ADP46075W3

ADP46075W3

MOSFET 6N-CH 750V 485A ACEPACK

STMicroelectronics

2,339 -
ADP46075W3

数据手册

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 750V 485A (Tj) 2.05mOhm @ 460A, 18V 4.4V @ 40mA 984nC @ 18V 27050pF @ 400V 704W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount ACEPACK