图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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MSCSM170AM039CT6AGMOSFET 2N-CH 1700V 523A |
4,516 | 1098.86 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 523A (Tc) | 5mOhm @ 270A, 20V | 3.3V @ 22.5mA | 1602nC @ 20V | 29700pF @ 1000V | 2.4kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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ADP360120W3MOSFET 6N-CH 1200V 379A ACEPACK |
3,561 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel | - | 1200V (1.2kV) | 379A (Tj) | 3.45mOhm @ 360A, 18V | 4.4V @ 40mA | 944nC @ 18V | 28070pF @ 800V | 704W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | ACEPACK |
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FAM65CR51DZ1MOSFET 2N-CH 650V 33A APMCD-B16 |
3,347 | - |
|
![]() 数据手册 |
- | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 650V | 33A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 160W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
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SH63N65DM6AGMOSFET 2N-CH 650V 53A 9ACEPACK |
2,377 | - |
|
![]() 数据手册 |
ECOPACK® | 9-PowerSMD | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 650V | 53A (Tc) | 64mOhm @ 23A, 10V | 4.75V @ 250µA | 80nC @ 10V | 3344pF @ 100V | 424W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-ACEPACK SMIT |
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NXH015P120M3F1PTGMOSFET 2N-CH 1200V 77A |
3,162 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 77A (Tc) | 20mOhm @ 60A, 18V | 4.4V @ 30mA | 211nC @ 18V | 4696pF @ 800V | 198W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH008P120M3F1PGMOSFET 2N-CH 1200V 145A |
4,639 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | 8334pF @ 800V | 382W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH011F120M3F2PTHGMOSFET 4N-CH 1200V 105A 34PIM |
3,547 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 16mOhm @ 100A, 18V | 4.4V @ 60mA | 284nC @ 18V | 6211.6pF @ 800V | 244W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 34-PIM (56.7x42.5) |
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NXH007F120M3F2PTHGMOSFET 4N-CH 1200V 149A 34PIM |
1,960 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 149A (Tc) | 10mOhm @ 120A, 18V | 4.4V @ 60mA | 407nC @ 18V | 9090pF @ 800V | 353W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 34-PIM (56.7x42.5) |
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MSCSM170HRM451AGMOSFET 4N-CH 1700V/1200V 64A |
4,164 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 64A (Tc), 89A (Tc) | 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 2.5mA, 2.8V @ 3mA | 178nC @ 20V, 232nC @ 20V | 3300pF @ 1000V, 3020pF @ 1000V | 319W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH008T120M3F2PTHGMOSFET 4N-CH 1200V 129A 29PIM |
3,907 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 129A (Tc) | 11.5mOhm @ 100A, 18V | 4.4V @ 60mA | 454nC @ 20V | 9129pF @ 800V | 371W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 29-PIM (56.7x42.5) |
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MSCSM120HRM311AGMOSFET 4N-CH 1200V/700V 89A |
4,575 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 89A (Tc), 124A (Tc) | 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 3mA, 2.4V @ 4mA | 232nC @ 20V, 215nC @ 20V | 3020pF @ 1000V, 4500pF @ 700V | 395W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH004P120M3F2PNGMOSFET 2N-CH 1200V 338A 36PIM |
3,546 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 338A (Tc) | 5.5mOhm @ 200A, 18V | 4.4V @ 120mA | 876nC @ 20V | 16410pF @ 800V | 1.098W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
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MSCSM170HRM233AGMOSFET 4N-CH 1700V/1200V 124A |
4,194 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 124A (Tc), 89A (Tc) | 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 5mA, 2.8V @ 3mA | 356nC @ 20V, 232nC @ 20V | 6600pF @ 1000V, 3020pF @ 1000V | 602W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM163AGMOSFET 4N-CH 1200V/700V 173A |
3,821 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 173A (Tc), 124A (Tc) | 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 6mA, 2.4V @ 4mA | 464nC, 215nC @ 20V | 6040pF @ 1000V, 4500pF @ 700V | 745W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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APTM100A13SCGMOSFET 2N-CH 1000V 65A SP6 |
1,303 | 289.75 |
|
- |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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MSCSM170HRM11NGMOSFET 4N-CH 1700V/1200V 226A |
3,656 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 226A (Tc), 163A (Tc) | 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V | 3.2V @ 10mA, 2.8V @ 6mA | 712nC @ 20V, 464nC @ 20V | 13200pF @ 1000V, 6040pF @ 1000V | 1.012kW (Tc), 662W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM042T6AGMOSFET 2N-CH 1200V 495A |
3,344 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM08NGMOSFET 4N-CH 1200V/700V 317A |
2,680 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 317A (Tc), 227A (Tc) | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V | 2.8V @ 12mA, 2.4V @ 8mA | 928nC @ 20V, 430nC @ 20V | 12100pF @ 1000V, 9000pF @ 700V | 1.253kW (Tc), 613W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NVVR26A120M1WSTMOSFET 2N-CH 1200V AHPM15-CDA |
3,703 | - |
|
![]() 数据手册 |
- | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDA |
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ADP46075W3MOSFET 6N-CH 750V 485A ACEPACK |
2,339 | - |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel | - | 750V | 485A (Tj) | 2.05mOhm @ 460A, 18V | 4.4V @ 40mA | 984nC @ 18V | 27050pF @ 400V | 704W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | ACEPACK |