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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMJD015N06CLTWG

NVMJD015N06CLTWG

MOSFET 2N-CH 60V 10.1A 8LFPAK

onsemi

8,574 -
NVMJD015N06CLTWG

数据手册

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 10.1A (Ta), 35A (Tc) 14.4mOhm @ 17A, 10V 2.2V @ 25µA 9.4nC @ 10V 643pF @ 30V 3.1W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,933 -
NVMJD7D4N04CLTWG

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
NVMJD012N06CLTWG

NVMJD012N06CLTWG

MOSFET 2N-CH 60V 11.5A 8LFPAK

onsemi

9,941 -
NVMJD012N06CLTWG

数据手册

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 11.5A (Ta), 42A (Tc) 11.9mOhm @ 25A, 10V 2.2V @ 30µA 11.5nC @ 10V 792pF @ 25V 3.2W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMFD5C470NT1G

NVMFD5C470NT1G

MOSFET 2N-CH 40V 11.7A 8DFN

onsemi

5,906 1.65
NVMFD5C470NT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 11.7A (Ta), 36A (Tc) 11.7mOhm @ 10A, 10V 3.5V @ 250µA 8nC @ 10V 420pF @ 25V 3.1W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMJD5D4N04CTWG

NVMJD5D4N04CTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,708 -
NVMJD5D4N04CTWG

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
NVMFD5C462NLT1G

NVMFD5C462NLT1G

MOSFET 2N-CH 40V 18A 8DFN

onsemi

8,993 2.23
NVMFD5C462NLT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 18A (Ta), 84A (Tc) 4.7mOhm @ 10A, 10V 2.2V @ 40µA 11nC @ 4.5V 1300pF @ 25V 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
CSD86356Q5DT

CSD86356Q5DT

MOSFET 2N-CH 25V 40A 8VSON-CLIP

Texas Instruments

5,505 1.15
CSD86356Q5DT

数据手册

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate, 5V Drive 25V 40A (Ta) 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V 1.85V @ 250µA, 1.5V @ 250µA 7.9nC @ 4.5V, 19.3nC @ 4.5V 1040pF @ 12.5V, 2510pF @ 12.5V 12W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
MSCSM120AM31T1AG

MSCSM120AM31T1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

5,778 91.78
MSCSM120AM31T1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M19C1AG

MSCSM70VR1M19C1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

9,305 -
MSCSM70VR1M19C1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,193 118.85
MSCSM120DUM31TBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

2,052 118.85
MSCSM120AM31TBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM50T3AG

MSCSM120HM50T3AG

MOSFET 4N-CH 1200V 55A

Microchip Technology

6,679 123.96
MSCSM120HM50T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

9,240 -
MSCSM120VR1M31C1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

8,165 140.67
MSCSM120DUM31CTBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,104 140.67
MSCSM120AM31CTBL1NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM16T1AG

MSCSM120AM16T1AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

5,028 153.38
MSCSM120AM16T1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

5,827 156.74
MSCSM120DHM31CTBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31T3AG

MSCSM120HM31T3AG

MOSFET 4N-CH 1200V 89A

Microchip Technology

8,784 187.67
MSCSM120HM31T3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31TBL2NG

MSCSM120HM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

5,760 208.70
MSCSM120HM31TBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM31TBL2NG

MSCSM120DDUM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

8,448 208.70
MSCSM120DDUM31TBL2NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -