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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 -
MSCSM120VR1M062CT6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM063AG

MSCSM120HM063AG

MOSFET 4N-CH 1200V 333A

Microchip Technology

5,753 723.66
MSCSM120HM063AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

6,532 -
MSCSM120VR1M16CTPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM11TPAG

MSCSM120TAM11TPAG

MOSFET 6N-CH 1200V 251A

Microchip Technology

5,406 794.25
MSCSM120TAM11TPAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027T6AG

MSCSM120AM027T6AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

8,830 794.56
MSCSM120AM027T6AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027D3AG

MSCSM120AM027D3AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

5,173 850.13
MSCSM120AM027D3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

MOSFET 2N-CH 1200V 805A

Microchip Technology

2,067 932.18
MSCSM120AM03T6LIAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

MOSFET 2N-CH 1200V 947A

Microchip Technology

8,818 1082.85
MSCSM120AM02T6LIAG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

MOSFET 2N-CH 1200V 733A D3

Microchip Technology

3,073 1112.70
MSCSM120AM027CD3AG

数据手册

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
FAM65CR51ADZ1

FAM65CR51ADZ1

MOSFET 2N-CH 650V 41A APMCD-B16

onsemi

3,999 -
FAM65CR51ADZ1

数据手册

- 12-SSIP Exposed Pad, Formed Leads Tube Active Silicon Carbide (SiC) 2 N-Channel - 650V 41A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 189W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NVXK2TR80WDT

NVXK2TR80WDT

MOSFET 4N-CH 1200V 20A APM32

onsemi

5,193 -
NVXK2TR80WDT

数据手册

- 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2VR80WXT2

NVXK2VR80WXT2

MOSFET 6N-CH 1200V 31A APM32

onsemi

3,969 -
NVXK2VR80WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2PR80WXT2

NVXK2PR80WXT2

MOSFET 4N-CH 1200V 31A APM32

onsemi

2,267 -
NVXK2PR80WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1P45M12W2-1LA

M1P45M12W2-1LA

MOSFET 6N-CH 1200V ACEPACK DMT

STMicroelectronics

5,427 -
M1P45M12W2-1LA

数据手册

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 30A (Tc) 60.5mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
NVXK2VR80WDT2

NVXK2VR80WDT2

MOSFET 6N-CH 1200V 20A APM32

onsemi

2,337 -
NVXK2VR80WDT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1F80M12W2-1LA

M1F80M12W2-1LA

AUTOMOTIVE-GRADE ACEPACK DMT-32

STMicroelectronics

9,403 -
M1F80M12W2-1LA

数据手册

* - Tube Active - - - - - - - - - - - - - - -
NXH040F120MNF1PG

NXH040F120MNF1PG

MOSFET 4N-CH 1200V 30A 22PIM

onsemi

6,006 83.98
NXH040F120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
MSCSM120AM50T1AG

MSCSM120AM50T1AG

MOSFET 2N-CH 1200V 55A

Microchip Technology

7,822 -
MSCSM120AM50T1AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P90MNF1PG

NXH010P90MNF1PG

MOSFET 2N-CH 900V 154A

onsemi

3,091 90.52
NXH010P90MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH010P120MNF1PG

NXH010P120MNF1PG

MOSFET 2N-CH 1200V 114A

onsemi

5,990 108.78
NXH010P120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -