图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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MSCSM120VR1M062CT6AGMOSFET 2N-CH 1200V 420A |
6,745 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 420A (Tc) | 6.2mOhm @ 200A, 20V | 2.8V @ 15mA | 1160nC @ 20V | 15100pF @ 1000V | 1.753kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HM063AGMOSFET 4N-CH 1200V 333A |
5,753 | 723.66 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 333A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12000pF @ 1000V | 873W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120VR1M16CTPAGMOSFET 6N-CH 1200V 171A |
6,532 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | - | 1200V (1.2kV) | 171A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 728W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120TAM11TPAGMOSFET 6N-CH 1200V 251A |
5,406 | 794.25 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | - | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9060pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM027T6AGMOSFET 2N-CH 1200V 733A |
8,830 | 794.56 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 27mA | 2088nC @ 20V | 27000pF @ 1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM027D3AGMOSFET 2N-CH 1200V 733A |
5,173 | 850.13 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 27mA | 2088nC @ 20V | 27000pF @ 1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM03T6LIAGMOSFET 2N-CH 1200V 805A |
2,067 | 932.18 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 30mA | 2320nC @ 20V | 30200pF @ 1000V | 3.215kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM02T6LIAGMOSFET 2N-CH 1200V 947A |
8,818 | 1082.85 |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 947A (Tc) | 2.6mOhm @ 480A, 20V | 2.8V @ 36mA | 2784nC @ 20V | 36200pF @ 1000V | 3.75kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM027CD3AGMOSFET 2N-CH 1200V 733A D3 |
3,073 | 1112.70 |
|
![]() 数据手册 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 733A (Tc) | 3.5mOhm @ 360A, 20V | 2.8V @ 9mA | 2088nC @ 20V | 27000pF @1000V | 2.97kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | D3 |
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FAM65CR51ADZ1MOSFET 2N-CH 650V 41A APMCD-B16 |
3,999 | - |
|
![]() 数据手册 |
- | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 650V | 41A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 189W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
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NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 | - |
|
![]() 数据手册 |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 | - |
|
![]() 数据手册 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 | - |
|
![]() 数据手册 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 | - |
|
![]() 数据手册 |
ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
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NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 |
2,337 | - |
|
![]() 数据手册 |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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M1F80M12W2-1LAAUTOMOTIVE-GRADE ACEPACK DMT-32 |
9,403 | - |
|
![]() 数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXH040F120MNF1PGMOSFET 4N-CH 1200V 30A 22PIM |
6,006 | 83.98 |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
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MSCSM120AM50T1AGMOSFET 2N-CH 1200V 55A |
7,822 | - |
|
![]() 数据手册 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH010P90MNF1PGMOSFET 2N-CH 900V 154A |
3,091 | 90.52 |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 900V | 154A (Tc) | 14mOhm @ 100A, 15V | 4.3V @ 40mA | 546.4nC @ 15V | 7007pF @ 450V | 328W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH010P120MNF1PGMOSFET 2N-CH 1200V 114A |
5,990 | 108.78 |
|
![]() 数据手册 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |