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全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

MOSFET 2N-CH 1200V 742A SP6C LI

Microchip Technology

6,766 -
MSCMC120AM02CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V 33500pF @ 1000V 3200W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC120AM04CT6LIAG

MSCMC120AM04CT6LIAG

MOSFET 2N-CH 1200V 388A SP6C LI

Microchip Technology

5,991 -
MSCMC120AM04CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V 16700pF @ 1000V 1754W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC120AM03CT6LIAG

MSCMC120AM03CT6LIAG

MOSFET 2N-CH 1200V 631A SP6C LI

Microchip Technology

7,657 -
MSCMC120AM03CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V 27900pF @ 1000V 2778W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC90AM12C3AG

MSCMC90AM12C3AG

MOSFET 900V 110A SP3F

Microchip Technology

2,313 -
MSCMC90AM12C3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) - - 900V 110A (Tc) - - - - - - - - Chassis Mount SP3F
MSCMC120AM07CT6LIAG

MSCMC120AM07CT6LIAG

MOSFET 2N-CH 1200V 264A SP6C LI

Microchip Technology

2,593 -
MSCMC120AM07CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V 11400pF @ 1000V 1350W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC170AM08CT6LIAG

MSCMC170AM08CT6LIAG

MOSFET 2N-CH 1700V 280A SP6C LI

Microchip Technology

4,025 -
MSCMC170AM08CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V 22000pF @ 1000V 1780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6C LI
NTMFD5875NLT1G

NTMFD5875NLT1G

MOSFET 2N-CH 60V 7A 8DFN

onsemi

5,672 0.45

-

- 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 7A (Ta), 22A (Tc) 33mOhm @ 7.5A, 10V 3V @ 250µA 5.9nC @ 4.5V 540pF @ 25V 3.2W (Ta), 32W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
HUFA76407DK8TF085P

HUFA76407DK8TF085P

MOSFET 2N-CH 60V 3.8A 8SOIC

onsemi

3,605 -

-

UltraFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 3.8A (Ta) 90mOhm @ 3.8A, 10V 3V @ 250µA - 330pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
PMDPB95XNE2115

PMDPB95XNE2115

MOSFET 2N-CH 30V 2.7A 6HUSON

NXP USA Inc.

5,135 0.07
PMDPB95XNE2115

数据手册

- 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V 258pF @ 15V 510mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDMS3622SF121

FDMS3622SF121

MOSFET N-CHANNEL POWER56

onsemi

9,918 -

-

- - Bulk Obsolete - - - - - - - - - - - - - - -
EFC2K112NUZTDG

EFC2K112NUZTDG

MOSFET N-CH 12V 32A WLCSP DUAL

onsemi

7,991 0.46

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
FDG6332C-PG

FDG6332C-PG

MOSFET N/P-CH 20V 0.7A SC88

onsemi

3,706 -

-

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 700mA (Ta), 600mA (Ta) 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V, 2nC @ 4.5V 113pF @ 10V, 114pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
HUFA76413DK8T-F085P

HUFA76413DK8T-F085P

MOSFET 2N-CH 60V 5.1A 8SOIC

onsemi

8,558 -

-

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 5.1A (Tc) 49mOhm @ 5.1A, 10V 3V @ 250µA 23nC @ 10V 620pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
FDC6333C-G

FDC6333C-G

MOSFET N/P-CH 30V 2.5A SSOT6

onsemi

8,404 -

-

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 2.5A (Ta), 2A (Ta) 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V 3V @ 250µA 6.6nC @ 10V, 5.7nC @ 10V 282pF @ 15V, 185pF @ 15V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
MSCSM120HM16CTBL3NG

MSCSM120HM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

2,113 518.47
MSCSM120HM16CTBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM16TBL3NG

MSCSM120HM16TBL3NG

MOSFET 6N-CH 1200V 150A

Microchip Technology

6,075 437.27
MSCSM120HM16TBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM16TBL3NG

MSCSM120DDUM16TBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

9,089 437.27
MSCSM120DDUM16TBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
NTMFD0D9N02P1E

NTMFD0D9N02P1E

MOSFET 2N-CH 30V/25V 14A 8PQFN

onsemi

4,074 -
NTMFD0D9N02P1E

数据手册

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
CSD87330Q3DT

CSD87330Q3DT

MOSFET 2N-CH 30V 20A 8LSON

Texas Instruments

4,119 -
CSD87330Q3DT

数据手册

NexFET™ 8-PowerLDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 30V 20A (Ta) 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V 2.1V @ 250µA, 1.15V @ 250µA 5.8nC @ 4.5V, 11.5nC @ 4.5V 900pF @ 15V, 1632pF @ 15V 6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (3.3x3.3)
FDY1002PZ-G

FDY1002PZ-G

MOSFET 2P-CH 20V 0.83A SOT563

onsemi

7,492 -

-

PowerTrench® SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel Logic Level Gate 20V 830mA (Ta) 500mOhm @ 830mA, 4.5V 1V @ 250µA 3.1nC @ 4.5V 135pF @ 10V 446mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563