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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































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结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MQ2N2608

MQ2N2608

JFET P-CH 30V 5MA TO18

Microchip Technology

7,638 66.00

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V - 1 mA @ 5 V 5 mA 6 V @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/295 Through Hole TO-18 (TO-206AA)
MQ2N2609

MQ2N2609

JFET P-CH 30V TO18

Microchip Technology

2,351 66.00

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 2 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18 (TO-206AA)
2N2608UB/TR

2N2608UB/TR

JFET P-CH 30V UB

Microchip Technology

2,841 67.17

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V - 1 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) - - Surface Mount UB
2N2608UB

2N2608UB

JFET P-CH 30V UB

Microchip Technology

5,150 67.17

-

- 3-SMD, No Lead Bulk Active P-Channel 30 V - 1 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) - - Surface Mount UB
MX2N5114

MX2N5114

JFET P-CH 30V TO18

Microchip Technology

7,231 67.32
MX2N5114

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 90 mA @ 18 V - 10 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
MV2N5115

MV2N5115

JFET P-CH 30V TO18

Microchip Technology

2,704 67.32

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
MV2N4391UB

MV2N4391UB

JFET N-CH

Microchip Technology

5,828 67.58

-

* - Bulk Active - - - - - - - - - - - - - -
MV2N4392UB

MV2N4392UB

JFET N-CH

Microchip Technology

3,029 67.58

-

* - Bulk Active - - - - - - - - - - - - - -
MV2N4393UB

MV2N4393UB

JFET N-CH

Microchip Technology

3,660 67.58

-

* - Bulk Active - - - - - - - - - - - - - -
MV2N4391UB/TR

MV2N4391UB/TR

JFET

Microchip Technology

7,215 67.72

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -