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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































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结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MQ2N4393UB/TR

MQ2N4393UB/TR

JFET

Microchip Technology

7,551 60.46

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
MV2N4092

MV2N4092

JFET N-CH 40V TO18

Microchip Technology

4,667 61.39
MV2N4092

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 15 mA @ 20 V - - 16pF @ 20V 50 Ohms 360 mW -65°C ~ 175°C (TJ) Military MIL-PRF-19500/431 Through Hole TO-18 (TO-206AA)
2N2608

2N2608

JFET P-CH 30V TO18

Microchip Technology

6,680 61.89
2N2608

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V - 1 mA @ 5 V - 750 mV @ 1 µA 10pF @ 5V - 300 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18 (TO-206AA)
MX2N4858

MX2N4858

JFET N-CH 40V TO18

Microchip Technology

9,403 64.86
MX2N4858

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 80 mA @ 15 V - 4 V @ 0.5 nA 18pF @ 10V - 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MQ2N5115UB

MQ2N5115UB

JFET P-CH 30V UB

Microchip Technology

8,974 65.61

-

- 3-SMD, No Lead Bulk Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MQ2N5116UB

MQ2N5116UB

JFET P-CH 30V UB

Microchip Technology

6,660 65.61

-

- 3-SMD, No Lead Bulk Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MQ2N5114UB

MQ2N5114UB

JFET P-CH 30V UB

Microchip Technology

4,381 65.61

-

- 3-SMD, No Lead Bulk Active P-Channel 30 V 30 V 30 mA @ 18 V - 5 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MQ2N5114UB/TR

MQ2N5114UB/TR

JFET P-CH 30V UB

Microchip Technology

7,924 65.74

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 30 mA @ 18 V - 5 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MQ2N5115UB/TR

MQ2N5115UB/TR

JFET P-CH 30V UB

Microchip Technology

8,477 65.74

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MQ2N5116UB/TR

MQ2N5116UB/TR

JFET P-CH 30V UB

Microchip Technology

8,614 65.74

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB