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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































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图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MV2N4861

MV2N4861

JFET N-CH 30V TO18

Microchip Technology

9,402 49.70
MV2N4861

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 80 mA @ 15 V - 4 V @ 0.5 nA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
2N4856

2N4856

JFET N-CH 40V TO18

Microchip Technology

6,910 50.25
2N4856

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 175 mA @ 15 V - 10 V @ 500 pA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18
2N4857

2N4857

JFET N-CH 40V TO18

Microchip Technology

4,344 50.25
2N4857

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 100 mA @ 15 V - 6 V @ 500 pA 18pF @ 10V 40 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18
2N4859

2N4859

JFET N-CH 30V TO18

Microchip Technology

6,991 50.25
2N4859

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 175 mA @ 15 V - 10 V @ 500 pA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18
2N4860

2N4860

JFET N-CH 30V TO18

Microchip Technology

3,925 50.25
2N4860

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 100 mA @ 15 V - 6 V @ 500 pA 18pF @ 10V 40 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18
2N4861

2N4861

JFET N-CH 30V UB

Microchip Technology

4,652 50.25

-

- 3-SMD, No Lead Bulk Active N-Channel 30 V 30 V 8 mA @ 15 V - 800 mV @ 500 pA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) - - Surface Mount UB
2N3823UB/TR

2N3823UB/TR

JFET N-CH 30V UB

Microchip Technology

9,486 50.25

-

- 3-SMD, No Lead Tape & Reel (TR) Active N-Channel 30 V 30 V 4 mA @ 15 V - 8 V @ 500 pA 6pF @ 15V - 300 mW -55°C ~ 200°C (TJ) - - Surface Mount UB
2N3823UB

2N3823UB

JFET N-CH 30V UB

Microchip Technology

7,472 50.25

-

- 3-SMD, No Lead Bulk Active N-Channel 30 V 30 V 4 mA @ 15 V - 8 V @ 500 pA 6pF @ 15V - 300 mW -55°C ~ 200°C (TJ) - - Surface Mount UB
MQ2N4093

MQ2N4093

JFET N-CH 40V TO18

Microchip Technology

6,906 54.91

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 8 mA @ 20 V - - 16pF @ 20V 80 Ohms 360 mW -65°C ~ 175°C (TJ) Military MIL-PRF-19500/431 Through Hole TO-18 (TO-206AA)
MQ2N4091

MQ2N4091

JFET N-CH 40V TO18

Microchip Technology

2,112 54.91

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 30 mA @ 20 V - - 16pF @ 20V 30 Ohms 360 mW -65°C ~ 175°C (TJ) - - Through Hole TO-18 (TO-206AA)