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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































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图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
2N5114UB

2N5114UB

JFET P-CH 30V UB

Microchip Technology

7,949 -
2N5114UB

数据手册

- 3-SMD, No Lead Bulk Discontinued at Digi-Key P-Channel 30 V 30 V 90 mA @ 18 V - 10 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
2N5114UB/TR

2N5114UB/TR

JFET P-CH 30V UB

Microchip Technology

4,049 47.92

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 90 mA @ 18 V - 10 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
2N5116UA/TR

2N5116UA/TR

JFET P-CH 30V UA

Microchip Technology

2,397 48.43

-

- 4-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) - - Surface Mount UA
2N5116UA

2N5116UA

JFET P-CH 30V UA

Microchip Technology

5,837 48.43

-

- 4-SMD, No Lead Bulk Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) - - Surface Mount UA
2N4858

2N4858

JFET N-CH 40V TO18

Microchip Technology

8,476 49.10
2N4858

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 8 mA @ 15 V - 4 V @ 500 pA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18
MV2N4856

MV2N4856

JFET N-CH 40V TO18

Microchip Technology

4,387 49.70
MV2N4856

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 175 mA @ 15 V - 10 V @ 500 pA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MV2N4857

MV2N4857

JFET N-CH 40V TO18

Microchip Technology

2,508 49.70
MV2N4857

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 100 mA @ 15 V - 6 V @ 500 pA 18pF @ 10V 40 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18 (TO-206AA)
MV2N4858

MV2N4858

JFET N-CH 40V TO18

Microchip Technology

5,378 49.70
MV2N4858

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 80 mA @ 15 V - 4 V @ 0.5 nA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MV2N4859

MV2N4859

JFET N-CH 30V TO18

Microchip Technology

9,367 49.70
MV2N4859

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 175 mA @ 15 V - 10 V @ 500 pA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MV2N4860

MV2N4860

JFET N-CH 30V TO18

Microchip Technology

4,700 49.70
MV2N4860

数据手册

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 100 mA @ 15 V - 6 V @ 500 pA 18pF @ 10V 40 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18