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制造商 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装




















































































































































































































































































































































































































































































































































































































































































































































































































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图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 FET 类型 电压 - 击穿 (V(BR)GSS) 漏极到源极电压 (Vdss) 电流 - 漏极 (Idss) @ Vds (Vgs=0) 漏极电流 (Id) - 最大值 截止电压 (VGS off) @ Id 输入电容 (Ciss)(最大值)@ Vds 电阻 - RDS(On) 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
2N5116UB/TR

2N5116UB/TR

JFET P-CH 30V UB

Microchip Technology

3,590 45.74

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 25 mA @ 15 V - 4 V @ 1 nA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
2N5115UB/TR

2N5115UB/TR

JFET P-CH 30V UB

Microchip Technology

8,722 45.74

-

- 3-SMD, No Lead Tape & Reel (TR) Active P-Channel 30 V 30 V 60 mA @ 15 V - 6 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Surface Mount UB
MV2N4391

MV2N4391

JFET N-CH

Microchip Technology

6,841 46.73

-

* - Bulk Active - - - - - - - - - - - - - -
MQ2N5115

MQ2N5115

JFET P-CH 30V TO18

Microchip Technology

6,041 47.30

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 15 mA @ 15 V - 3 V @ 1 nA 25pF @ 15V 100 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
MQ2N4858

MQ2N4858

JFET N-CH 40V TO18

Microchip Technology

7,681 47.39

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 40 V 40 V 8 mA @ 15 V - 800 mV @ 500 pA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) - - Through Hole TO-18 (TO-206AA)
MQ2N4861

MQ2N4861

JFET N-CH 30V TO18

Microchip Technology

2,281 47.39

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 8 mA @ 15 V - 800 mV @ 500 pA 18pF @ 10V 60 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MQ2N4860

MQ2N4860

JFET N-CH 30V TO18

Microchip Technology

2,366 47.39

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 20 mA @ 15 V - 2 V @ 500 pA 18pF @ 10V 40 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MQ2N4859

MQ2N4859

JFET N-CH 30V TO18

Microchip Technology

2,986 47.39

-

- TO-206AA, TO-18-3 Metal Can Bulk Active N-Channel 30 V 30 V 50 mA @ 15 V - 4 V @ 500 pA 18pF @ 10V 25 Ohms 360 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500/385 Through Hole TO-18 (TO-206AA)
MQ2N5114

MQ2N5114

JFET P-CH 30V TO18

Microchip Technology

8,293 47.30

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 30 mA @ 18 V - 10 V @ 1 nA 25pF @ 15V 75 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18 (TO-206AA)
MQ2N5116

MQ2N5116

JFET P-CH 30V TO18

Microchip Technology

8,566 47.30

-

- TO-206AA, TO-18-3 Metal Can Bulk Active P-Channel 30 V 30 V 5 mA @ 15 V - 1 V @ 1 mA 27pF @ 15V 175 Ohms 500 mW -65°C ~ 200°C (TJ) Military MIL-PRF-19500 Through Hole TO-18