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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTC60HM70SCTG

APTC60HM70SCTG

MOSFET 4N-CH 600V 39A SP4

Microchip Technology

9,279 145.37
APTC60HM70SCTG

数据手册

CoolMOS™ SP4 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTC60HM70T1G

APTC60HM70T1G

MOSFET 4N-CH 600V 39A SP1

Microchip Technology

6,662 63.20
APTC60HM70T1G

数据手册

- SP1 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTMC60TL11CT3AG

APTMC60TL11CT3AG

MOSFET 4N-CH 1200V 28A SP3

Microchip Technology

7,373 -
APTMC60TL11CT3AG

数据手册

- SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 28A (Tc) 98mOhm @ 20A, 20V 2.2V @ 1mA 49nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTMC120AM08CD3AG

APTMC120AM08CD3AG

MOSFET 2N-CH 1200V 250A D3

Microchip Technology

2,436 -
APTMC120AM08CD3AG

数据手册

- D-3 Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 10mOhm @ 200A, 20V 2.2V @ 10mA (Typ) 490nC @ 20V 9500pF @ 1000V 1100W -40°C ~ 150°C (TJ) - - Chassis Mount D3
APTMC120AM16CD3AG

APTMC120AM16CD3AG

MOSFET 2N-CH 1200V 131A D3

Microchip Technology

2,640 -
APTMC120AM16CD3AG

数据手册

- D-3 Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 131A (Tc) 20mOhm @ 100A, 20V 2.2V @ 5mA (Typ) 246nC @ 20V 4750pF @ 1000V 625W -40°C ~ 150°C (TJ) - - Chassis Mount D3
APTMC120AM55CT1AG

APTMC120AM55CT1AG

MOSFET 2N-CH 1200V 55A SP1

Microchip Technology

3,891 -
APTMC120AM55CT1AG

数据手册

- SP1 Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 55A (Tc) 49mOhm @ 40A, 20V 2.2V @ 2mA (Typ) 98nC @ 20V 1900pF @ 1000V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTMC120TAM33CTPAG

APTMC120TAM33CTPAG

MOSFET 6N-CH 1200V 78A SP6-P

Microchip Technology

9,538 -
APTMC120TAM33CTPAG

数据手册

- SP6 Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 78A (Tc) 33mOhm @ 60A, 20V 2.2V @ 3mA (Typ) 148nC @ 20V 2850pF @ 1000V 370W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTMC60TLM55CT3AG

APTMC60TLM55CT3AG

MOSFET 4N-CH 1200V 48A SP3

Microchip Technology

4,627 -
APTMC60TLM55CT3AG

数据手册

- SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 48A (Tc) 49mOhm @ 40A, 20V 2.2V @ 2mA (Typ) 98nC @ 20V 1900pF @ 1000V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTMC120AM20CT1AG

APTMC120AM20CT1AG

MOSFET 2N-CH 1200V 143A SP1

Microchip Technology

7,611 -
APTMC120AM20CT1AG

数据手册

- SP1 Bulk Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 143A (Tc) 17mOhm @ 100A, 20V 2.3V @ 2mA (Typ) 360nC @ 20V 5960pF @ 1000V 600W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTMC120AM12CT3AG

APTMC120AM12CT3AG

MOSFET 2N-CH 1200V 220A SP3

Microchip Technology

6,175 -
APTMC120AM12CT3AG

数据手册

- SP3 Bulk Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 220A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP3