产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCMC120AM03CT6LIAG

MSCMC120AM03CT6LIAG

MOSFET 2N-CH 1200V 631A SP6C LI

Microchip Technology

7,657 -
MSCMC120AM03CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V 27900pF @ 1000V 2778W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC90AM12C3AG

MSCMC90AM12C3AG

MOSFET 900V 110A SP3F

Microchip Technology

2,313 -
MSCMC90AM12C3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) - - 900V 110A (Tc) - - - - - - - - Chassis Mount SP3F
MSCMC120AM07CT6LIAG

MSCMC120AM07CT6LIAG

MOSFET 2N-CH 1200V 264A SP6C LI

Microchip Technology

2,593 -
MSCMC120AM07CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V 11400pF @ 1000V 1350W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC170AM08CT6LIAG

MSCMC170AM08CT6LIAG

MOSFET 2N-CH 1700V 280A SP6C LI

Microchip Technology

4,025 -
MSCMC170AM08CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V 22000pF @ 1000V 1780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6C LI
MSCSM120HM16CTBL3NG

MSCSM120HM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

2,113 518.47
MSCSM120HM16CTBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM16TBL3NG

MSCSM120HM16TBL3NG

MOSFET 6N-CH 1200V 150A

Microchip Technology

6,075 437.27
MSCSM120HM16TBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM16TBL3NG

MSCSM120DDUM16TBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

9,089 437.27
MSCSM120DDUM16TBL3NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM029T6LIAG

MSCSM170AM029T6LIAG

SIC MOSFET

Microchip Technology

5,298 -
MSCSM170AM029T6LIAG

数据手册

- - Box Active - - - - - - - - - - - - - - -
MSCSM120AM13CT6AG

MSCSM120AM13CT6AG

SIC MOSFET

Microchip Technology

2,014 -
MSCSM120AM13CT6AG

数据手册

- - Box Active - - - - - - - - - - - - - - -
MSCSM70XM75CTYZBNMG

MSCSM70XM75CTYZBNMG

MOSFET 6N-CH 700V 31A

Microchip Technology

3,807 -
MSCSM70XM75CTYZBNMG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 31A (Tc), 52A (Tc) 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V 2.4V @ 1mA, 2.7V @ 2mA 56nC @ 20V, 99nC @ 20V 1175pF @ 700V, 2010pF @ 700V 90W (Tc), 141W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount -