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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTMC120AM09CT3AG

APTMC120AM09CT3AG

MOSFET 2N-CH 1200V 295A SP3

Microchip Technology

6,043 -
APTMC120AM09CT3AG

数据手册

- SP3 Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 295A (Tc) 9mOhm @ 200A, 20V 2.4V @ 40mA (Typ) 644nC @ 20V 11000pF @ 1000V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTMC170AM30CT1AG

APTMC170AM30CT1AG

MOSFET 2N-CH 1700V 100A SP1

Microchip Technology

9,689 -
APTMC170AM30CT1AG

数据手册

- SP1 Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 100A (Tc) 30mOhm @ 100A, 20V 2.3V @ 5mA (Typ) 380nC @ 20V 6160pF @ 1000V 700W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTMC120TAM17CTPAG

APTMC120TAM17CTPAG

MOSFET 6N-CH 1200V 147A SP6-P

Microchip Technology

4,318 -
APTMC120TAM17CTPAG

数据手册

- SP6 Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 147A (Tc) 17mOhm @ 100A, 20V 2.4V @ 20mA (Typ) 322nC @ 20V 5600pF @ 1000V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTMC60TLM14CAG

APTMC60TLM14CAG

MOSFET 4N-CH 1200V 219A SP6

Microchip Technology

6,523 -
APTMC60TLM14CAG

数据手册

- SP6 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 219A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTMC120TAM12CTPAG

APTMC120TAM12CTPAG

MOSFET 6N-CH 1200V 220A SP6-P

Microchip Technology

9,663 -
APTMC120TAM12CTPAG

数据手册

- SP6 Bulk Last Time Buy Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 220A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTMC120HM17CT3AG

APTMC120HM17CT3AG

MOSFET 4N-CH 1200V 147A SP3

Microchip Technology

6,801 -
APTMC120HM17CT3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 147A (Tc) 17mOhm @ 100A, 20V 4V @ 30mA 332nC @ 5V 5576pF @ 1000V 750W -40°C ~ 175°C (TJ) - - Chassis Mount SP3
APTMC120HR11CT3AG

APTMC120HR11CT3AG

MOSFET 2N-CH 1200V 26A SP3

Microchip Technology

9,628 -
APTMC120HR11CT3AG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 26A (Tc) 98mOhm @ 20A, 20V 3V @ 5mA 62nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTMC120TAM34CT3AG

APTMC120TAM34CT3AG

MOSFET 6N-CH 1200V 74A SP3

Microchip Technology

9,736 -

-

- Module Bulk Last Time Buy Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 74A (Tc) 34mOhm @ 50A, 20V 4V @ 15mA 161nC @ 5V 2788pF @ 1000V 375W -40°C ~ 175°C (TJ) - - Chassis Mount SP3
MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

MOSFET 2N-CH 1200V 742A SP6C LI

Microchip Technology

6,766 -
MSCMC120AM02CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V 33500pF @ 1000V 3200W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCMC120AM04CT6LIAG

MSCMC120AM04CT6LIAG

MOSFET 2N-CH 1200V 388A SP6C LI

Microchip Technology

5,991 -
MSCMC120AM04CT6LIAG

数据手册

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V 16700pF @ 1000V 1754W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI