产品中心

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FDML7610AS

FDML7610AS

DUAL N-CH. ER TRENCH MO

onsemi

27,000 0.22

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
ECH8662-TL-H

ECH8662-TL-H

ECH8662 - MOSFET 2 N-CHANNEL ARR

onsemi

3,000 -
ECH8662-TL-H

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
ECH8664R-TL-H

ECH8664R-TL-H

ECH8664R - N-CHANNEL POWER MOSFE

onsemi

21,000 -
ECH8664R-TL-H

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NTMFD4C820NAT1G

NTMFD4C820NAT1G

MOSFET 2N-CH 30V 9.1A 8DFN

onsemi

1,500 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 9.1A (Ta), 13.7A (Ta) 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V 2.1V @ 250µA 19nC @ 10V, 29nC @ 10V 970pF @ 15V, 1950pF @ 15V 1.09W (Ta), 1.15W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
NVMFWD040N10MCLT1G

NVMFWD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -

-

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDS6892A

FDS6892A

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi

4,514 0.41
FDS6892A

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
FDMS3616S

FDMS3616S

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

6,000 0.62
FDMS3616S

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
FDS6912

FDS6912

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi

20,207 0.66
FDS6912

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NVMFD010N10MCLT1G

NVMFD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD0D9N02P1E

NTMFD0D9N02P1E

MOSFET 2N-CH 30V/25V 14A 8PQFN

onsemi

161,223 -

-

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC @ 4.5V, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)