图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDML7610ASDUAL N-CH. ER TRENCH MO onsemi |
27,000 | 0.22 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
ECH8662-TL-HECH8662 - MOSFET 2 N-CHANNEL ARR onsemi |
3,000 | - |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
ECH8664R-TL-HECH8664R - N-CHANNEL POWER MOSFE onsemi |
21,000 | - |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
NTMFD4C820NAT1GMOSFET 2N-CH 30V 9.1A 8DFN onsemi |
1,500 | - |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 9.1A (Ta), 13.7A (Ta) | 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V | 2.1V @ 250µA | 19nC @ 10V, 29nC @ 10V | 970pF @ 15V, 1950pF @ 15V | 1.09W (Ta), 1.15W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
![]() |
NVMFWD040N10MCLT1GMOSFET 2N-CH 100V 6.1A 8DFN onsemi |
6,000 | - |
|
- |
- | 8-PowerTDFN | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 6.1A (Ta), 21A (Tc) | 39mOhm @ 5A, 10V | 3V @ 26µA | 8.4nC @ 10V | 520pF @ 50V | 3.2W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
![]() |
FDS6892APOWER FIELD-EFFECT TRANSISTOR, 7 onsemi |
4,514 | 0.41 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FDMS3616SSMALL SIGNAL FIELD-EFFECT TRANSI onsemi |
6,000 | 0.62 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
FDS6912POWER FIELD-EFFECT TRANSISTOR, 6 onsemi |
20,207 | 0.66 |
|
![]() 数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
NVMFD010N10MCLT1GMOSFET 2N-CH 100V 11.6A 8DFN onsemi |
9,000 | - |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 11.6A (Ta), 61A (Tc) | 10.4mOhm @ 17A, 10V | 3V @ 97µA | 26nC @ 10V | 1800pF @ 50V | 3.1W (Ta), 84W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
![]() |
NTMFD0D9N02P1EMOSFET 2N-CH 30V/25V 14A 8PQFN onsemi |
161,223 | - |
|
- |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | - | 30V, 25V | 14A (Ta), 30A (Ta) | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V | 2V @ 340µA, 2V @ 1mA | 9nC @ 4.5V, 30nC @ 4.5V | 1400pF @ 15V, 5050pF @ 13V | 960mW (Ta), 1.04W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |