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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SFT1405-TL-E

SFT1405-TL-E

MOSFET N-CH

onsemi

700 0.33

-

* - Bulk Active - - - - - - - - - - - - - - -
CPH6636R-TL-W

CPH6636R-TL-W

MOSFET 2N-CH 24V 6A 6CPH

onsemi

3,422 0.36
CPH6636R-TL-W

数据手册

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 24V 6A 20mOhm @ 3A, 4.5V - 3nC @ 4.5V - 900mW 150°C (TJ) - - Surface Mount 6-CPH
MMDF2P02HDR2G

MMDF2P02HDR2G

MOSFET 2P-CH 20V 3.3A 8SOIC

onsemi

5,597 0.47
MMDF2P02HDR2G

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.3A 160mOhm @ 2A, 10V 2V @ 250µA 20nC @ 10V 588pF @ 16V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
MTB6N60ET4

MTB6N60ET4

MOSFET N-CH 600V 6A

onsemi

790 0.49
MTB6N60ET4

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
MPIC2117P

MPIC2117P

MOSFET

onsemi

750 0.49
MPIC2117P

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
FDG6332C

FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

onsemi

1,709 0.45
FDG6332C

数据手册

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 700mA, 600mA 300mOhm @ 700mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V 113pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
NTLUD3A260PZTAG

NTLUD3A260PZTAG

MOSFET 2P-CH 20V 1.3A 6UDFN

onsemi

4,290 0.46
NTLUD3A260PZTAG

数据手册

- 6-UFDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1.3A 200mOhm @ 2A, 4.5V 1V @ 250µA 4.2nC @ 4.5V 300pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (1.6x1.6)
FDMD8530

FDMD8530

MOSFET 2N-CH 30V 35A POWER56

onsemi

5,471 -
FDMD8530

数据手册

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 35A 1.25mOhm @ 35A, 10V 3V @ 250µA 149nC @ 10V 10395pF @ 15V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount Power56
FDS6930B

FDS6930B

MOSFET 2N-CH 30V 5.5A 8SOIC

onsemi

3,796 0.62
FDS6930B

数据手册

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 38mOhm @ 5.5A, 10V 3V @ 250µA 3.8nC @ 5V 412pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NVMJD025N04CTWG

NVMJD025N04CTWG

MOSFET N-CH 40V LFPAK56

onsemi

3,840 -
NVMJD025N04CTWG

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -