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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMFWD010N10MCLT1G

NVMFWD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -

-

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDMS1D2N03DSD

FDMS1D2N03DSD

MOSFET

onsemi

52,964 0.95
FDMS1D2N03DSD

数据手册

* - Bulk Active - - - - - - - - - - - - - - -
NVMFD040N10MCLT1G

NVMFD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXH020U90MNF2PTG

NXH020U90MNF2PTG

MOSFET 2N-CH 900V 149A

onsemi

3,924 -
NXH020U90MNF2PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V 149A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 352W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NVXK2VR40WXT2

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

1,306 -
NVXK2VR40WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVVR26A120M1WSB

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

2,303 -
NVVR26A120M1WSB

数据手册

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

3,577 -
NVVR26A120M1WSS

数据手册

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
FAM65CR51DZ1

FAM65CR51DZ1

MOSFET 2N-CH 650V 33A APMCD-B16

onsemi

3,347 -
FAM65CR51DZ1

数据手册

- 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 33A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 160W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NXH015P120M3F1PTG

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

3,162 -
NXH015P120M3F1PTG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008P120M3F1PG

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

4,639 -
NXH008P120M3F1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -