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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMJD027N06CLTWG

NVMJD027N06CLTWG

MOSFET 2N-CH 60V 7.7A 8LFPAK

onsemi

2,999 -
NVMJD027N06CLTWG

数据手册

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 7.7A (Ta), 21A (Tc) 27mOhm @ 9A, 10V 2.2V @ 13µA 5nC @ 10V 335pF @ 30V 3.2W (Ta), 24W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMJD015N06CLTWG

NVMJD015N06CLTWG

MOSFET 2N-CH 60V 10.1A 8LFPAK

onsemi

8,574 -
NVMJD015N06CLTWG

数据手册

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 10.1A (Ta), 35A (Tc) 14.4mOhm @ 17A, 10V 2.2V @ 25µA 9.4nC @ 10V 643pF @ 30V 3.1W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,933 -
NVMJD7D4N04CLTWG

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
NVMJD012N06CLTWG

NVMJD012N06CLTWG

MOSFET 2N-CH 60V 11.5A 8LFPAK

onsemi

9,941 -
NVMJD012N06CLTWG

数据手册

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 11.5A (Ta), 42A (Tc) 11.9mOhm @ 25A, 10V 2.2V @ 30µA 11.5nC @ 10V 792pF @ 25V 3.2W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMFD5C470NT1G

NVMFD5C470NT1G

MOSFET 2N-CH 40V 11.7A 8DFN

onsemi

5,906 1.65
NVMFD5C470NT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 11.7A (Ta), 36A (Tc) 11.7mOhm @ 10A, 10V 3.5V @ 250µA 8nC @ 10V 420pF @ 25V 3.1W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMJD5D4N04CTWG

NVMJD5D4N04CTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,708 -
NVMJD5D4N04CTWG

数据手册

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
NVMFD5C462NLT1G

NVMFD5C462NLT1G

MOSFET 2N-CH 40V 18A 8DFN

onsemi

8,993 2.23
NVMFD5C462NLT1G

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 18A (Ta), 84A (Tc) 4.7mOhm @ 10A, 10V 2.2V @ 40µA 11nC @ 4.5V 1300pF @ 25V 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FAM65CR51ADZ1

FAM65CR51ADZ1

MOSFET 2N-CH 650V 41A APMCD-B16

onsemi

3,999 -
FAM65CR51ADZ1

数据手册

- 12-SSIP Exposed Pad, Formed Leads Tube Active Silicon Carbide (SiC) 2 N-Channel - 650V 41A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 189W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
NVXK2TR80WDT

NVXK2TR80WDT

MOSFET 4N-CH 1200V 20A APM32

onsemi

5,193 -
NVXK2TR80WDT

数据手册

- 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2VR80WXT2

NVXK2VR80WXT2

MOSFET 6N-CH 1200V 31A APM32

onsemi

3,969 -
NVXK2VR80WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32