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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVXK2PR80WXT2

NVXK2PR80WXT2

MOSFET 4N-CH 1200V 31A APM32

onsemi

2,267 -
NVXK2PR80WXT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2VR80WDT2

NVXK2VR80WDT2

MOSFET 6N-CH 1200V 20A APM32

onsemi

2,337 -
NVXK2VR80WDT2

数据手册

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NXH040F120MNF1PG

NXH040F120MNF1PG

MOSFET 4N-CH 1200V 30A 22PIM

onsemi

6,006 83.98
NXH040F120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
NXH010P90MNF1PG

NXH010P90MNF1PG

MOSFET 2N-CH 900V 154A

onsemi

3,091 90.52
NXH010P90MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH010P120MNF1PG

NXH010P120MNF1PG

MOSFET 2N-CH 1200V 114A

onsemi

5,990 108.78
NXH010P120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH020P120MNF1PG

NXH020P120MNF1PG

MOSFET 2N-CH 1200V 51A

onsemi

2,676 83.98
NXH020P120MNF1PG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH006P120M3F2PTHG

NXH006P120M3F2PTHG

MOSFET 2N-CH 1200V 191A 36PIM

onsemi

3,939 -
NXH006P120M3F2PTHG

数据手册

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 191A (Tc) 8mOhm @ 100A, 18V 4.4V @ 80mA 622nC @ 20V 11914pF @ 800V 556W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
NDC7002N_SB9G007

NDC7002N_SB9G007

MOSFET 2N-CH 50V 0.51A SSOT6

onsemi

9,281 -
NDC7002N_SB9G007

数据手册

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 50V 510mA 2Ohm @ 510mA, 10V 2.5V @ 250µA 1nC @ 10V 20pF @ 25V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
NTJD4001NT1

NTJD4001NT1

MOSFET 2N-CH 30V 0.25A SC88

onsemi

9,950 -
NTJD4001NT1

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 1.5Ohm @ 10mA, 4V 1.5V @ 100µA 1.3nC @ 5V 33pF @ 5V 272mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
NTJD4001NT2G

NTJD4001NT2G

MOSFET 2N-CH 30V 0.25A SC88

onsemi

4,865 -
NTJD4001NT2G

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 250mA 1.5Ohm @ 10mA, 4V 1.5V @ 100µA 1.3nC @ 5V 33pF @ 5V 272mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363